10GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50W load. Main Features ● Very broad operating frequency ra

10GHz Frequency Divider by 4 Fixed Modulus Prescaler

10GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50W load. Main Features ● Very broad operating frequency ra

10GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50W load. Main Features ● Very broad operating frequency ra

10GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50W load. Main Features ● Very broad operating frequency ra

10GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50W load. Main Features ● Very broad operating frequency ra

9GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC

Description\nThe CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50Ω load. The CND2047 is available in a low cost SOIC8 RoHS comp Very broad operating frequency range\nLow power dissipation: 300mW\nSingle supply operation: 3V to 5V\nLow phase noise: -139dBc/Hz at 1KHz;

9GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50Ω load. The CND2047 is available in a low cost SOIC8 RoHS

10GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50W load. Main Features ● Very broad operating frequency ra

10GHz Frequency Divider by 4 Fixed Modulus Prescaler

Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50W load. Main Features ● Very broad operating frequency ra

9GHz Frequency Divider by 4 Fixed Modulus Prescaler

文件：120.08 Kbytes Page：8 Pages

9GHz Frequency Divider by 4 Fixed Modulus Prescaler

文件：120.08 Kbytes Page：8 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

UHF power LDMOS transistor

文件：103.84 Kbytes Page：12 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

文件：36.03 Kbytes Page：2 Pages