位置：首页 > IC中文资料第6910页 > CMT02N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMT02N60 | POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new | CHAMP 虹冠电子 |   | |
CMT02N60 | POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | |
CMT02N60 | POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
CMT02N60 | POWER FIELD EFFECT TRANSISTOR | Champion 全鹏电子 | | |
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：328.89 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：241.15 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70191 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70195 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70167 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70169 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N CHANNEL ENHANCEMENT MODE 文件：701.78 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
CMT02N60产品属性
- 类型
描述
- 型号
CMT02N60
- 制造商
CHAMP
- 制造商全称
CHAMP
- 功能描述
POWER FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CMT |
25+ |
TO220 |
177 |
原装正品,假一罚十! |
|||
CM |
25+ |
TO-220F |
2800 |
原装现货!可长期供货! |
|||
CHAMPION |
23+ |
TO-220F |
20000 |
专做原装正品,假一罚百! |
|||
CMT |
25+23+ |
TO-220F |
15008 |
绝对原装正品全新进口深圳现货 |
|||
CHAMPION |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
CHAMPION |
23+ |
TO252 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CMT |
24+ |
TO-220 |
868 |
||||
CMT |
15+ |
TO252 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CHAMPION |
24+ |
SOP8 |
6618 |
公司现货库存,支持实单 |
|||
TOSHIBA/东芝 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
CMT02N60规格书下载地址
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DdatasheetPDF页码索引
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