| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances | MOTOROLA 摩托罗拉 |   | ||
Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: • Excellent Safe Area Limits | NTE | | ||
Adjustable Micropower Voltage References 文件：747.67 Kbytes Page：14 Pages | NSC 国半 | | ||
Adjustable Micropower Voltage References 文件：747.67 Kbytes Page：14 Pages | NSC 国半 | | ||
Adjustable Micropower Voltage References 文件：747.67 Kbytes Page：14 Pages | NSC 国半 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NTE |
23+ |
65480 |
|||||
26+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
2022+ |
66 |
全新原装 货期两周 |
CMPWR185SA芯片相关品牌
CMPWR185SA规格书下载地址
CMPWR185SA参数引脚图相关
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