TRANSISTORS

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PROGRAMMABLE UJT SOT-23 分立半导体产品 晶体管 - 可编程单结

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PROGRAMMABLE UJT SOT-23 分立半导体产品 晶体管 - 可编程单结

TRANSISTORS

文件：290.61 Kbytes Page：3 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

PROGRAMMABLE UNIJUNCTION TRANSISTOR

[GESS] Programmable Unijunction Transistor

Dual Power MOSFET Drivers

General Description The MAX626/7/8 are dual monolithic power MOSFET drivers designed to translate TTL input to high voltage/current outputs. The MAX626 is a dual inverting power MOSFET driver. The MAX627 is a dual non-inverting power MOSFET driver, and the MAX628 contains one inverting section an

Silicon programmable unijunction transistor (PUTs)

[Planeta Electronic company]

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free