SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV. MARKING CODE: C700

Surface mount MOSFET N-Channel Enhancement Mode

SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

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Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY

Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of peripheral loads. The seven open-collector Darlington outputs are specified for 135 V minimum breakdown and

Inside DC Block

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Graphite Brush

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