60V, 300mA N-Channel MOSFET in SOT-23 package

Central Semiconductor’s CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for high speed pulsed amplifier and driver applications. Features: • ESD protection up to 1800V • 350mW power dissipation • Low gate charge • Low rDS(ON) Applicatio

Surface mount MOSFET N-Channel Enhancement Mode

SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

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SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

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Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

C-band Crossbar/Fan-Out

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Male Pins

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toggle switches

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