CURFACE MOUNT LOW LEAKAGE SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode.

SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE

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SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE

文件：648.04 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 180V 200MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列

3 Watts - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

10 MHz Sine/Square Wave Generator

[B&K Precision Corp.] 10 MHz Sine/Square Wave Generator The model 3003 signal generator is a cost-effective signal source that delivers clean and accurate DC to 10 MHz waveforms with frequency accuracy of 0.02 and 0.1Hz frequency resolution. Eight push wheel switches enable the user to quick

RF Manual 16th edition

10 MHz Sine/Square Wave Generator

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