CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH2-4L is a high current, low VF silicon Schottky diode in an SOD-523 surface mount package. This device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required.

ULTRAminiTM SURFACE MOUNT SCHOTTKY DIODES

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring a low forward voltage drop. MARKING CODE: 53

SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an enhanced version of the CMOSH-3 silicon Schottky diode in an SOD-523 surface mount package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: ♦ IF from 100mA MAX to 200mA MAX ♦ BVR from 30V MIN to 40V MIN ♦ VF from 1.0V MAX to 0.8V MAX

1.5-MICRON CMOS GATE ARRAYS

LOWEST SUPPLY CURRENT FOR BATTERY-POWERED APPLICATIONS

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LOWEST SUPPLY CURRENT FOR BATTERY-POWERED APPLICATIONS

Surface mount Diode-Schottky (<1A) Single: Low VF

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

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SILICON SCHOTTKY DIODE

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封装/外壳：SC-79，SOD-523 包装：卷带（TR） 描述：DIODE SCHOTTKY 30V 100MA SOD523 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SC-79，SOD-523 包装：剪切带（CT）带盒（TB） 描述：DIODE SCHOTTKY 30V 100MA SOD523 分立半导体产品 二极管 - 整流器 - 单

SURFACE MOUNT SILICON SCHOTTKY DIODE

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SURFACE MOUNT SILICON SCHOTTKY DIODE

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SURFACE MOUNT SILICON SCHOTTKY DIODE

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ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE

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SURFACE MOUNT SILICON SCHOTTKY DIODE

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TRANSISTOR TRANSISTOR LOGIC

TC7400BP