丝印代码：CMOS；Single 2 A High-Speed, Low-Side Gate Driver

文件：1.70846 Mbytes Page：21 Pages

丝印代码：CMOS；Single 2 A High-Speed, Low-Side Gate Driver

文件：1.70846 Mbytes Page：21 Pages

CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH2-4L is a high current, low VF silicon Schottky diode in an SOD-523 surface mount package. This device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required.

ULTRAminiTM SURFACE MOUNT SCHOTTKY DIODES

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring a low forward voltage drop. MARKING CODE: 53

SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an enhanced version of the CMOSH-3 silicon Schottky diode in an SOD-523 surface mount package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: ♦ IF from 100mA MAX to 200mA MAX ♦ BVR from 30V MIN to 40V MIN ♦ VF from 1.0V MAX to 0.8V MAX

1.5-MICRON CMOS GATE ARRAYS

LOWEST SUPPLY CURRENT FOR BATTERY-POWERED APPLICATIONS

LOWEST SUPPLY CURRENT FOR BATTERY-POWERED APPLICATIONS

文件：935.23 Kbytes Page：3 Pages

Surface mount Diode-Schottky (<1A) Single: Low VF

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

文件：344.54 Kbytes Page：2 Pages

SILICON SCHOTTKY DIODE

文件：494.06 Kbytes Page：2 Pages

封装/外壳：SC-79，SOD-523 包装：卷带（TR） 描述：DIODE SCHOTTKY 30V 100MA SOD523 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SC-79，SOD-523 包装：剪切带（CT）带盒（TB） 描述：DIODE SCHOTTKY 30V 100MA SOD523 分立半导体产品 二极管 - 整流器 - 单

SURFACE MOUNT SILICON SCHOTTKY DIODE

文件：344.44 Kbytes Page：2 Pages

SURFACE MOUNT SILICON SCHOTTKY DIODE

文件：493.95 Kbytes Page：2 Pages

SURFACE MOUNT SILICON SCHOTTKY DIODE

文件：493.95 Kbytes Page：2 Pages

ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE

文件：419.72 Kbytes Page：2 Pages

SURFACE MOUNT SILICON SCHOTTKY DIODE

文件：568.91 Kbytes Page：2 Pages

TRANSISTOR TRANSISTOR LOGIC

TC7400BP