30 kHz to GHz GaAs MMIC Optical Modulator Driver Amplifer

General Description Mimix Broadband’s distributed 30.0 kHz-30.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 11.0 dB with a +22.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography t

30 kHz-30 GHz GaAs MMIC Optical Modulator Driver Amplifier

文件：197.95 Kbytes Page：4 Pages

30.0 kHz-30.0 GHz GaAs MMIC

文件：1.71635 Mbytes Page：8 Pages

30 kHz to GHz GaAs MMIC Optical Modulator Driver Amplifer

30 kHz-30 GHz GaAs MMIC Optical Modulator Driver Amplifier

文件：197.95 Kbytes Page：4 Pages

30.0 kHz-30.0 GHz GaAs MMIC

文件：1.71635 Mbytes Page：8 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh