MOS

N-Channel 500V(D-S) Super Junction Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Low RDS(on) • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (

TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

This new power MOSFET realized the low switching loss and low switching noise

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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