18-40 GHz Low Noise Amplifier

文件：255.49 Kbytes Page：12 Pages

18-40 GHz Low Noise Amplifier

文件：255.49 Kbytes Page：12 Pages

18-40 GHz (K, Ka Band) Low Noise Amplifier

18-40 GHz Low Noise Amplifier

18-40 GHz Low Noise Amplifier

文件：353.39 Kbytes Page：13 Pages

18-40 GHz Low Noise Amplifier

文件：290.86 Kbytes Page：12 Pages

18-40 GHz Low Noise Amplifier

文件：353.39 Kbytes Page：13 Pages

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. FEATURES • Low threshold voltage • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • Battery powered applications e.g. cellular phones • Gen

2.0 AMPS. FAST RECOVRY RECTIFIERS

SOFT RECOVERY PLASTIC RECTIFIER(VOLTAGE - 100 to 800 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Void-free molded plastic package • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • In

Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converters with MUX and Sample/Hold

文件：1.16349 Mbytes Page：41 Pages

Precision Reference

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