THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPA Series • 16 Pin DIP SSR • Ratings to 1A @ 280 VAC • SCR output • Voltage or current-control input • Zero-crossing (resistive loads) output

封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 25A 24-280V 继电器 固态继电器

封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 25A 24-280V 继电器 固态继电器

固态继电器(可控硅输出)

Panel Mount

文件：580.94 Kbytes Page：5 Pages

Panel Mount

文件：580.94 Kbytes Page：5 Pages

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

4-PORT TRANSFER SWITCH

Product Description The RF2425 is a very low-cost single-throw, double-pole GaAs MESFET switch. There are two bidirectional input/output channels which can be turned off or on by a single logic control line. Two of the ports may be tied together externally to make a transmit/receive switch. The d

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the