HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE - 5th generation Fast switching IGBT module - Collector current IC .............…............… 600 A Collector-emitter voltage VCES ...........… 600 V Maximum junction temperature Tjmax ... 150 °C ● Flat base Type ● Copper base plate ● RoH

Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconn

Dual IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES.......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient am

Dual IGBTMOD NFH-Series Module 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse c

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION AC moter controll of forklift (battery power source)

Dual IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION AC moter controll of forklift (battery power source)

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION AC moter controll of forklift (battery power source)

Dual IGBTMOD NF-Series Module 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc

Dual IGBTMOD A-series Module 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge confguration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Powerex Dual IGBT Modules are designed for use in switching applications.

Description: Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................600A ● VCES ....................................................... 1700V ● Insulated Type ● 2-elements in a pack APP

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................600A ● VCES ....................................................... 1700V ● Insulated Type ● 1-elements in a pack (for

Single IGBTMOD 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD??A-Series Module 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connect ed super-fast recovery free-wheel diode. All components and in ter connects are isolated from the heat sinking basepla

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC ….………………….…….. 600 A ● VCES ……………..…...….. 1200 V ● Flat base Type Copper (non-plating) base plate No accessory (terminal screw) attach ● RoHS Directive compliant APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc.

Single IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 600 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

Trench Gate Design Single IGBTMOD??600 Amperes/250 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering s

Single IGBTMOD??HVIGBT 600 Amperes/4500 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syste

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................600A ● VCES ....................................................... 4500V ● Insulated Type ● 1-element in

Trench Gate Design Single IGBTMOD??600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE

● IC ...................................................................600A ● VCES ............................................................600V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................600A ● VCES ..........................................................600V ● Insulated Type ● 1-element in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION

Single IGBTMOD 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Trench Gate Design Single IGBTMOD??600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

Single IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................600A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION

Power Modules-HVIGBT Modules/HVIPM X series CM600DA-66X

Power Modules-HVIGBT Modules/HVIPM X series CM600DE-66X

Power Modules-IGBT Modules NFH series CM600DU-12NFH

IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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Dual IGBT NX-Series Module 600 Amperes/1200 Volts

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Dual IGBT NX-Series Module 600 Amperes/1700 Volts

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HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

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Chopper IGBTMOD NFH-Series Module 600 Amperes/600 Volts

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Single IGBTMOD A-Series Module

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Single IGBT A-Series Module 600 Amperes/1200 Volts

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