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CM60晶体管资料
CM60-12A别名：CM60-12A三极管、CM60-12A晶体管、CM60-12A晶体三极管
CM60-12A生产厂家：美国空间功率电子学公司
CM60-12A制作材料：Si-NPN
CM60-12A性质：超高频/特高频 （UHF）_功率放大 （L）
CM60-12A封装形式：贴片封装
CM60-12A极限工作电压：36V
CM60-12A最大电流允许值：15A
CM60-12A最大工作频率：470MHZ
CM60-12A引脚数：3
CM60-12A最大耗散功率：145W
CM60-12A放大倍数：
CM60-12A图片代号：H-99
CM60-12Avtest：36
CM60-12Ahtest：470000000
- CM60-12Aatest：15
CM60-12Awtest：145
CM60-12A代换 CM60-12A用什么型号代替：
CM60价格
参考价格：￥2831.1759
型号：CM600DU-24NFH 品牌：POWEREX 备注：这里有CM60多少钱，2025年最近7天走势，今日出价，今日竞价，CM60批发/采购报价，CM60行情走势销售排行榜，CM60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE -5thgenerationFastswitchingIGBTmodule- CollectorcurrentIC.............…............…600A Collector-emittervoltageVCES...........…600V MaximumjunctiontemperatureTjmax...150°C ●FlatbaseType ●Copperbaseplate ●RoH | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  |   | |
Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinhighfrequencyapplications;30kHzforhardswitchingapplicationsand60to70kHzforsoftswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconn | POWEREX Powerex Power Semiconductors |  | | |
Dual IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
IGBT MODULES HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES..........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrolers,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Highfrequencyswitchinguse(30kHzto60kHz). Gradientam | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD NFH-Series Module 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinhighfrequencyapplications;30kHzforhardswitchingapplicationsand60to70kHzforsoftswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareversec | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................250V ●InsulatedType ●2-elementsinapack APPLICATION ACmotercontrollofforklift(batterypowersource) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
IGBT MODULES HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................250V ●InsulatedType ●2-elementsinapack APPLICATION ACmotercontrollofforklift(batterypowersource) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
IGBT MODULES HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................250V ●InsulatedType ●2-elementsinapack APPLICATION ACmotercontrollofforklift(batterypowersource) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................600V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD NF-Series Module 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION ACdriveinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD A-series Module 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfgurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
Powerex Dual IGBT Modules are designed for use in switching applications. Description: PowerexDualIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE HVIGBT(HighVoltageInsulatedGateBipolarTransistor)Modules ●IC...................................................................600A ●VCES.......................................................1700V ●InsulatedType ●2-elementsinapack APP | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE HVIGBT(HighVoltageInsulatedGateBipolarTransistor)Modules ●IC...................................................................600A ●VCES.......................................................1700V ●InsulatedType ●1-elementsinapack(for | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
Single IGBTMOD??A-Series Module 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbasepla | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IC….………………….……..600A ●VCES……………..…...…..1200V ●FlatbaseType Copper(non-plating)baseplate Noaccessory(terminalscrew)attach ●RoHSDirectivecompliant APPLICATION ACMotorControl,Motion/ServoControl,Powersupply,etc. | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/1400 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfiguration,withareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offerings | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Trench Gate Design Single IGBTMOD??600 Amperes/250 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfiguration,withareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate | POWEREX Powerex Power Semiconductors | | | |
Single IGBTMOD??HVIGBT 600 Amperes/4500 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsimplifiedsyste | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE 2nd-VersionHVIGBT(HighVoltageInsulatedGateBipolarTransistor)Modules ●IC...................................................................600A ●VCES.......................................................4500V ●InsulatedType ●1-elementin | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE ●IC...................................................................600A ●VCES............................................................600V ●InsulatedType ●1-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Trench Gate Design Single IGBTMOD??600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfreewheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IC...................................................................600A ●VCES..........................................................600V ●InsulatedType ●1-elementinapack ●ULRecognizedYellowCardNo.E80276FileNo.E80271 APPLICATION | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfreewheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●1-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Trench Gate Design Single IGBTMOD??600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfreewheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IC...................................................................600A ●VCES.......................................................1200V ●InsulatedType ●1-elementinapack ●ULRecognizedYellowCardNo.E80276FileNo.E80271 APPLICATION | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
B-6 Single Bayonet Base, B-3 1/2 Single Contact Miniature Flange Base B-6SingleBayonetBase B-31/2SingleContactMiniatureFlangeBase | CML Chicago Miniature Lamp,inc |  | | |
Single Bayonet Base B-6SingleBayonetBase B-31/2SingleContactMiniatureFlangeBase | VCC Visual Communications Company |  | | |
T-1 Wire Terminal (standard) T-1WireTerminal(standard) | CML Chicago Miniature Lamp,inc | | | |
T-1 3/4 Wire Terminal (standard) T-13/4WireTerminal(standard) | CML Chicago Miniature Lamp,inc | | | |
T-1 3/4 Midget Flange Base T-13/4MidgetFlangeBase | CML Chicago Miniature Lamp,inc | | | |
T-1 3/4 Midget Groove Base ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | CML Chicago Miniature Lamp,inc | | | |
G-4 1/2 Miniature Bayonet Base G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase | CML Chicago Miniature Lamp,inc | | | |
G-4 1/2 Miniature Bayonet Base G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase | CML Chicago Miniature Lamp,inc | | | |
G-4 1/2 Miniature Bayonet Base G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase | CML Chicago Miniature Lamp,inc | | | |
T-2 Telephone Slide Base - Type 3 T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | CML Chicago Miniature Lamp,inc | | | |
Telephone Slide,Miniature Bayonet Base T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | VCC Visual Communications Company | | | |
Camaster HRC Fuse Holders 30, 60, and 100 Amps; 600V A.C. •Range:30(miniature),30,60,and100Ampsat600Va.c. •ArangeoffullyshroudedHRCFuseHoldershavingan advanceddesign. •Theyincorporateahighlevelofinnovation,withenhanced performancecharacteristicsandcomplywiththerequirements of:CSAC22.2No.39aswellasIEC269 | COOPER COOPER |  | | |
T-2 Telephone Slide Base - Type 3 T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | CML Chicago Miniature Lamp,inc | | | |
Telephone Slide,Miniature Bayonet Base T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | VCC Visual Communications Company | | | |
T-2 Telephone Slide Base - Type 5 (short) T-2TelephoneSlideBase-Type5(short) T-2TelephoneSlideBaseType5(standard) T-2TelephoneSlideBase-Type3 | CML Chicago Miniature Lamp,inc | | | |
IGBT MODULES HIGH POWER SWITCHING USE 文件：98.53 Kbytes Page：4 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
IGBT MODULES HIGH POWER SWITCHING USE 文件：98.53 Kbytes Page：4 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
IGBT MODULES HIGH POWER SWITCHING USE 文件：103.08 Kbytes Page：4 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
IGBT MODULES HIGH POWER SWITCHING USE 文件：103.08 Kbytes Page：4 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE INSULATED TYPE 文件：744.42 Kbytes Page：10 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE INSULATED TYPE 文件：833.4 Kbytes Page：9 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBT NX-Series Module 600 Amperes/1200 Volts 文件：1.13146 Mbytes Page：9 Pages | POWEREX Powerex Power Semiconductors | | |
CM60产品属性
- 类型
描述
- 型号
CM60
- 制造商
EDDING
- 功能描述
CUTTING MAT 60 X 90CM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBSHI |
25+ |
原厂原封可拆样 |
64586 |
百分百原装现货 实单必成 |
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MITSUBISHI/三菱 |
12+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
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MITSUBISHI/三菱 |
25+ |
IGBT |
880000 |
明嘉莱只做原装正品现货 |
|||
MITSUBISHI/三菱 |
1950+ |
980 |
只做原装正品现货!或订货假一赔十! |
||||
MITSUBISH |
25+23+ |
IGBT |
29618 |
绝对原装正品全新进口深圳现货 |
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MITSUBISHI |
25+ |
600A/1200V/I |
50 |
全新原装、诚信经营、公司现货销售! |
|||
MITSUBISHI/三菱 |
25+ |
IGBT |
3000 |
全新原装正品支持含税 |
|||
MITSUBISHI |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
|||
MITSUBISHI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
三凌 |
20+ |
原装模块 |
368 |
样品可出,原装现货 |
CM60芯片相关品牌
CM60规格书下载地址
CM60参数引脚图相关
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- CL855(A...C)
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- CL266
CM60数据表相关新闻
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深圳科雨电子有限公司，联系人：卢小姐手机：18975515225 原装正品大量现货，有需要的可以联系我QQ:97877805微信：wei555222777
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深圳市八零友创科技有限公司原装正品优势热卖
2019-8-16
DdatasheetPDF页码索引
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