HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE - 5th generation Fast switching IGBT module - Collector current IC .............…............… 600 A Collector-emitter voltage VCES ...........… 600 V Maximum junction temperature Tjmax ... 150 °C ● Flat base Type ● Copper base plate ● RoH

Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconn

Dual IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES.......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient am

Dual IGBTMOD NFH-Series Module 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse c

Dual IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION AC moter controll of forklift (battery power source)

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION AC moter controll of forklift (battery power source)

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION AC moter controll of forklift (battery power source)

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Dual IGBTMOD NF-Series Module 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc

Dual IGBTMOD A-series Module 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge confguration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Powerex Dual IGBT Modules are designed for use in switching applications.

Description: Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................600A ● VCES ....................................................... 1700V ● Insulated Type ● 2-elements in a pack APP

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................600A ● VCES ....................................................... 1700V ● Insulated Type ● 1-elements in a pack (for

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

Single IGBTMOD??A-Series Module 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connect ed super-fast recovery free-wheel diode. All components and in ter connects are isolated from the heat sinking basepla

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC ….………………….…….. 600 A ● VCES ……………..…...….. 1200 V ● Flat base Type Copper (non-plating) base plate No accessory (terminal screw) attach ● RoHS Directive compliant APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc.

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 600 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering s

Trench Gate Design Single IGBTMOD??600 Amperes/250 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate

Single IGBTMOD??HVIGBT 600 Amperes/4500 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syste

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................600A ● VCES ....................................................... 4500V ● Insulated Type ● 1-element in

HIGH POWER SWITCHING USE

● IC ...................................................................600A ● VCES ............................................................600V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Trench Gate Design Single IGBTMOD??600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................600A ● VCES ..........................................................600V ● Insulated Type ● 1-element in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION

Single IGBTMOD 600 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................600A ● VCES ......................................................... 1200V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Trench Gate Design Single IGBTMOD??600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................600A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION

Single IGBTMOD 600 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

B-6 Single Bayonet Base, B-3 1/2 Single Contact Miniature Flange Base

B-6 Single Bayonet Base B-3 1/2 Single Contact Miniature Flange Base

Single Bayonet Base

B-6 Single Bayonet Base B-3 1/2 Single Contact Miniature Flange Base

T-1 Wire Terminal (standard)

T-1 Wire Terminal(standard)

T-1 3/4 Wire Terminal (standard)

T-1 3/4 Wire Terminal (standard)

T-1 3/4 Midget Flange Base

T-1 3/4 Midget Flange Base

T-1 3/4 Midget Groove Base

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

G-4 1/2 Miniature Bayonet Base

G-4 1/2 Miniature Bayonet Base G-4 1/2 Miniature Screw Base G-4 1/2 Miniature 2 Pin Base

G-4 1/2 Miniature Bayonet Base

G-4 1/2 Miniature Bayonet Base G-4 1/2 Miniature Screw Base G-4 1/2 Miniature 2 Pin Base

G-4 1/2 Miniature Bayonet Base

G-4 1/2 Miniature Bayonet Base G-4 1/2 Miniature Screw Base G-4 1/2 Miniature 2 Pin Base

T-2 Telephone Slide Base - Type 3

T-2 Telephone Slide Base - Type 3 T-2 Miniature Bayonet Base

Telephone Slide,Miniature Bayonet Base

T-2 Telephone Slide Base - Type 3 T-2 Miniature Bayonet Base

Camaster HRC Fuse Holders 30, 60, and 100 Amps; 600V A.C.

• Range: 30 (miniature), 30, 60, and 100 Amps at 600V a.c. • A range of fully shrouded HRC Fuse Holders having an advanced design. • They incorporate a high level of innovation, with enhanced performance characteristics and comply with the requirements of: CSA C22.2 No. 39 as well as IEC 269

T-2 Telephone Slide Base - Type 3

T-2 Telephone Slide Base - Type 3 T-2 Miniature Bayonet Base

Telephone Slide,Miniature Bayonet Base

T-2 Telephone Slide Base - Type 3 T-2 Miniature Bayonet Base

T-2 Telephone Slide Base - Type 5 (short)

T-2 Telephone Slide Base - Type 5 (short) T-2 Telephone Slide Base Type 5 (standard) T-2 Telephone Slide Base - Type 3

IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

文件：103.08 Kbytes Page：4 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

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Power Modules-IGBT Modules T series CM600DX-24T

Power Modules-IGBT Modules T1 series CM600DX-24T1