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CM6晶体管资料
CM60-12A别名：CM60-12A三极管、CM60-12A晶体管、CM60-12A晶体三极管
CM60-12A生产厂家：美国空间功率电子学公司
CM60-12A制作材料：Si-NPN
CM60-12A性质：超高频/特高频 （UHF）_功率放大 （L）
CM60-12A封装形式：贴片封装
CM60-12A极限工作电压：36V
CM60-12A最大电流允许值：15A
CM60-12A最大工作频率：470MHZ
CM60-12A引脚数：3
CM60-12A最大耗散功率：145W
CM60-12A放大倍数：
CM60-12A图片代号：H-99
CM60-12Avtest：36
CM60-12Ahtest：470000000
- CM60-12Aatest：15
CM60-12Awtest：145
CM60-12A代换 CM60-12A用什么型号代替：
CM6价格
参考价格：￥2831.1759
型号：CM600DU-24NFH 品牌：POWEREX 备注：这里有CM6多少钱，2025年最近7天走势，今日出价，今日竞价，CM6批发/采购报价，CM6行情走势销售排行榜，CM6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CM6 | Double Contact Bayonet Base S-8DoubleContactBayonetBase | VCC Visual Communications Company |  |   |
CM6 | S-8 Double Contact Bayonet Base 文件：218.05 Kbytes Page：1 Pages | CML Chicago Miniature Lamp,inc |  | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE -5thgenerationFastswitchingIGBTmodule- CollectorcurrentIC.............…............…600A Collector-emittervoltageVCES...........…600V MaximumjunctiontemperatureTjmax...150°C ●FlatbaseType ●Copperbaseplate ●RoH | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
Dual IGBTMOD NFH-Series Module 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinhighfrequencyapplications;30kHzforhardswitchingapplicationsand60to70kHzforsoftswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconn | POWEREX Powerex Power Semiconductors |  | | |
Dual IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
IGBT MODULES HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES..........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrolers,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION Highfrequencyswitchinguse(30kHzto60kHz). Gradientam | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD NFH-Series Module 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinhighfrequencyapplications;30kHzforhardswitchingapplicationsand60to70kHzforsoftswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareversec | POWEREX Powerex Power Semiconductors | | | |
Dual IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................250V ●InsulatedType ●2-elementsinapack APPLICATION ACmotercontrollofforklift(batterypowersource) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
IGBT MODULES HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................250V ●InsulatedType ●2-elementsinapack APPLICATION ACmotercontrollofforklift(batterypowersource) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
IGBT MODULES HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................250V ●InsulatedType ●2-elementsinapack APPLICATION ACmotercontrollofforklift(batterypowersource) | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES............................................................600V ●InsulatedType ●2-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD NF-Series Module 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfigurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●2-elementsinapack APPLICATION ACdriveinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Dual IGBTMOD A-series Module 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalfbridgeconfgurationwitheachtransistorhavingareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfrom | POWEREX Powerex Power Semiconductors | | | |
Powerex Dual IGBT Modules are designed for use in switching applications. Description: PowerexDualIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfro | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE HVIGBT(HighVoltageInsulatedGateBipolarTransistor)Modules ●IC...................................................................600A ●VCES.......................................................1700V ●InsulatedType ●2-elementsinapack APP | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE HVIGBT(HighVoltageInsulatedGateBipolarTransistor)Modules ●IC...................................................................600A ●VCES.......................................................1700V ●InsulatedType ●1-elementsinapack(for | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
Single IGBTMOD??A-Series Module 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbasepla | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IC….………………….……..600A ●VCES……………..…...…..1200V ●FlatbaseType Copper(non-plating)baseplate Noaccessory(terminalscrew)attach ●RoHSDirectivecompliant APPLICATION ACMotorControl,Motion/ServoControl,Powersupply,etc. | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/1400 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE Description: MitsubishiIGBTModulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTinasingleconfiguration,withareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offerings | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Trench Gate Design Single IGBTMOD??600 Amperes/250 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfiguration,withareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate | POWEREX Powerex Power Semiconductors | | | |
Single IGBTMOD??HVIGBT 600 Amperes/4500 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorwithareverse-connectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsimplifiedsyste | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE 2nd-VersionHVIGBT(HighVoltageInsulatedGateBipolarTransistor)Modules ●IC...................................................................600A ●VCES.......................................................4500V ●InsulatedType ●1-elementin | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH POWER SWITCHING USE ●IC...................................................................600A ●VCES............................................................600V ●InsulatedType ●1-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Trench Gate Design Single IGBTMOD??600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfreewheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IC...................................................................600A ●VCES..........................................................600V ●InsulatedType ●1-elementinapack ●ULRecognizedYellowCardNo.E80276FileNo.E80271 APPLICATION | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/600 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfreewheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE HIGHPOWERSWITCHINGUSE ●IC...................................................................600A ●VCES.........................................................1200V ●InsulatedType ●1-elementsinapack APPLICATION Generalpurposeinverters&Servocontrols,etc | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Trench Gate Design Single IGBTMOD??600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverse-connectedsuper-fastrecoveryfreewheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IC...................................................................600A ●VCES.......................................................1200V ●InsulatedType ●1-elementinapack ●ULRecognizedYellowCardNo.E80276FileNo.E80271 APPLICATION | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Single IGBTMOD 600 Amperes/1200 Volts Description: PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsofoneIGBTTransistorinasingleconfigurationwithareverseconnectedsuper-fastrecoveryfree-wheeldiode.Allcomponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate, | POWEREX Powerex Power Semiconductors | | | |
B-6 Single Bayonet Base, B-3 1/2 Single Contact Miniature Flange Base B-6SingleBayonetBase B-31/2SingleContactMiniatureFlangeBase | CML Chicago Miniature Lamp,inc | | | |
Single Bayonet Base B-6SingleBayonetBase B-31/2SingleContactMiniatureFlangeBase | VCC Visual Communications Company | | | |
T-1 Wire Terminal (standard) T-1WireTerminal(standard) | CML Chicago Miniature Lamp,inc | | | |
T-1 3/4 Wire Terminal (standard) T-13/4WireTerminal(standard) | CML Chicago Miniature Lamp,inc | | | |
T-1 3/4 Midget Flange Base T-13/4MidgetFlangeBase | CML Chicago Miniature Lamp,inc | | | |
T-1 3/4 Midget Groove Base ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | CML Chicago Miniature Lamp,inc | | | |
G-4 1/2 Miniature Bayonet Base G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase | CML Chicago Miniature Lamp,inc | | | |
G-4 1/2 Miniature Bayonet Base G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase | CML Chicago Miniature Lamp,inc | | | |
G-4 1/2 Miniature Bayonet Base G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase | CML Chicago Miniature Lamp,inc | | | |
T-2 Telephone Slide Base - Type 3 T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | CML Chicago Miniature Lamp,inc | | | |
Telephone Slide,Miniature Bayonet Base T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | VCC Visual Communications Company | | | |
Camaster HRC Fuse Holders 30, 60, and 100 Amps; 600V A.C. •Range:30(miniature),30,60,and100Ampsat600Va.c. •ArangeoffullyshroudedHRCFuseHoldershavingan advanceddesign. •Theyincorporateahighlevelofinnovation,withenhanced performancecharacteristicsandcomplywiththerequirements of:CSAC22.2No.39aswellasIEC269 | COOPER COOPER |  | | |
T-2 Telephone Slide Base - Type 3 T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | CML Chicago Miniature Lamp,inc | | | |
Telephone Slide,Miniature Bayonet Base T-2TelephoneSlideBase-Type3 T-2MiniatureBayonetBase | VCC Visual Communications Company | | | |
T-2 Telephone Slide Base - Type 5 (short) T-2TelephoneSlideBase-Type5(short) T-2TelephoneSlideBaseType5(standard) T-2TelephoneSlideBase-Type3 | CML Chicago Miniature Lamp,inc | | | |
0.4mm Pitch Daisy Chain ProductDescription The6100isa4-bumpverylowcapacitanceESDprotectiondevicein0.4mmCSPformfactor.ItisfullycompliantwithIEC61000-4-2.TheCM6100isRoHSIIcompliant. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
G-3 1/2 Miniature 2 Pin Base WHEREINNOVATIONCOMESTOLIGHT | CML Chicago Miniature Lamp,inc | | | |
Single-Channel Transient Voltage Suppressor ProductDescription ONSemiconductor’sCM6136isanApplicationSpecificIntegratedPassive™(ASIP™)componentina2x2,4ïbump,0.4mmpitch,CSPformfactor.Thisdeviceisdesignedfor: •Fuse •TransientVoltageSuppression(TVS) •ElectrostaticDischargeProtection •Electr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
T-1 Wire Terminal (standard) T-1WireTerminal(standard) | CML Chicago Miniature Lamp,inc | | | |
T-1 Wire Terminal (standard) T-1WireTerminal(standard) T-1Sub-MidgetFlangeBase | CML Chicago Miniature Lamp,inc | | |
CM6产品属性
- 类型
描述
- 型号
CM6
- 制造商
CML
- 制造商全称
Chicago Miniature Lamp,inc
- 功能描述
S-8 Double Contact Bayonet Base
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CHK |
24+ |
NA/ |
3549 |
原装现货,当天可交货,原型号开票 |
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三菱 |
23+ |
模块 |
20000 |
全新原装假一赔十 |
|||
MITSUBISHI/三菱 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
CHAMPION |
21+ |
SOP-16 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
C-MEDIA |
22+ |
QFP48 |
100000 |
代理渠道/只做原装/可含税 |
|||
CHAMPION/全鹏 |
25+ |
ZIP9 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
CHAMPIO |
20+ |
SOP10 |
11520 |
特价全新原装公司现货 |
|||
台湾 |
24+ |
SMD |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MITSUBISHI |
23+ |
MODULE |
3500 |
MITSUBISHI系列在售 |
|||
CM |
24+ |
DIP16 |
48650 |
原装正品 特价现货(香港 新加坡 日本) |
CM6芯片相关品牌
CM6规格书下载地址
CM6参数引脚图相关
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CM6数据表相关新闻
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DdatasheetPDF页码索引
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