G-3 1/2 Miniature 2 Pin Base

WHERE INNOVATION COMES TO LIGHT

Base

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丝印代码：CM520B；CMOS Dual Up-Counters

Features: Medium-speed operation — 6-MHz typical clock frequency st 10 V, = Positive- or negative-edge triggering m Synchronous internal carry propagation . 100% tested for quiescent current at 20 V & Maximum input current of 1 uA at 18 V ‘over full package-temperature range; 100 nAat

丝印代码：CM520B；CMOS Dual Up-Counters

Features: Medium-speed operation — 6-MHz typical clock frequency st 10 V, = Positive- or negative-edge triggering m Synchronous internal carry propagation . 100% tested for quiescent current at 20 V & Maximum input current of 1 uA at 18 V ‘over full package-temperature range; 100 nAat

丝印代码：CM520B；CMOS Dual Up-Counters

Features: Medium-speed operation — 6-MHz typical clock frequency st 10 V, = Positive- or negative-edge triggering m Synchronous internal carry propagation . 100% tested for quiescent current at 20 V & Maximum input current of 1 uA at 18 V ‘over full package-temperature range; 100 nAat

丝印代码：CM521B；CMOS 24-Stage Frequency Divider

Features: Reset disables the RC oscillator for low- power standby condition Voo' and Vss' pins are brought out from the crystal oscillator to allow use of external resistors for low-power operation a Maximum input current of 1 yA at 18 V. over full package-temperature range: 100 nA at 18

丝印代码：CM521B；CMOS 24-Stage Frequency Divider

Features: Reset disables the RC oscillator for low- power standby condition Voo' and Vss' pins are brought out from the crystal oscillator to allow use of external resistors for low-power operation a Maximum input current of 1 yA at 18 V. over full package-temperature range: 100 nA at 18

丝印代码：CM522B；CMOS Programmable BCD Divide-by-“N” Counter

Features: ® Internally synchronous for high inter- nal and external speeds. ® Logic edge-clocked design — incre- ments on positive Clock transition or on negative Clock Inhibit transition. ® 100% tested for quiescent current at 20-V. B® 5-V, 10-V, and 15-V parametric ratings. ® Standar

丝印代码：CM522B；CMOS Programmable BCD Divide-by-“N” Counter

Features: ® Internally synchronous for high inter- nal and external speeds. ® Logic edge-clocked design — incre- ments on positive Clock transition or on negative Clock Inhibit transition. ® 100% tested for quiescent current at 20-V. B® 5-V, 10-V, and 15-V parametric ratings. ® Standar

丝印代码：CM527B；CMOS BCD Rate Multiplier

Features: * Cascadable in multiples of 4-bits * Set to “9” input and, ‘8 detect output * 100 test for quiescent current at 20 V * 5.V, 10-V, and 15-V parametric ratings * Standardized, symmetrical output characteristics * Maximum input eurrent of 1 uA at 18 V over full package-temperature

丝印代码：CM527B；CMOS BCD Rate Multiplier

Features: Cascadable in multiples of 4-bits =m Set to “9” inpat amd, “'9” detect output = 100% test for quiescent current at 20 V 5.V, 10-V, and 15-V parametric ratings Standardized, symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package-temperat

丝印代码：CM527B；CMOS BCD Rate Multiplier

Features: Cascadable in multiples of 4-bits =m Set to “9” inpat amd, “'9” detect output = 100% test for quiescent current at 20 V 5.V, 10-V, and 15-V parametric ratings Standardized, symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package-temperat

丝印代码：CM527B；CMOS BCD Rate Multiplier

Features: * Cascadable in multiples of 4-bits * Set to “9” input and, ‘8 detect output * 100 test for quiescent current at 20 V * 5.V, 10-V, and 15-V parametric ratings * Standardized, symmetrical output characteristics * Maximum input eurrent of 1 uA at 18 V over full package-temperature

丝印代码：CM527B；CMOS BCD Rate Multiplier

Features: Cascadable in multiples of 4-bits =m Set to “9” inpat amd, “'9” detect output = 100% test for quiescent current at 20 V 5.V, 10-V, and 15-V parametric ratings Standardized, symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package-temperat

SCR/Diode POW-R-BLOK??Modules 130 Amperes/800 Volts

Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and isolated packaging. The modules are isolated for easy mounting with other components on common heatsinks. Features: □ Isolated Mounting □ Glass Passivated Chips □ Metal Basepla

R-12 Single Contact Bayonet Base

R-12 Single Contact Bayonet Base, R-12 Double Contact Bayonet Base & G-6 Candelabra Screw Base

碳膜晶圆电阻0.5W 150Kohm 5%

• SMD enabled structure\n• Excellent solderability termination\n• Heat dissipation is much better than chip resistor\n• Stronger mechanical structure to endure vibration and thermal shock\n• Products meet RoHS requirements and do not contain substances of very high concern identified by European Che;

封装/外壳：POW-R-BLOK™ 模块 包装：散装 描述：SCR MOD PWR-BLOK 1200V 130A 分立半导体产品 晶闸管 - SCR - 模块

SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/1200-1600 Volts

SCR/Diode POW-R-BLOK??Modules 130 Amperes/1200-1600 Volts

文件：81.9 Kbytes Page：4 Pages

SCR/Diode POW-R-BLOK??Modules 130 Amperes/1200-1600 Volts

文件：81.9 Kbytes Page：4 Pages

SCR/Diode POW-R-BLOK™ Modules 130 Amperes/1200-1600 Volts

封装/外壳：POW-R-BLOK™ 模块 包装：散装 描述：SCR MOD PWR-BLOK 1600V 130A 分立半导体产品 晶闸管 - SCR - 模块

R-12 Single, Double, Candelabra Contact Bayonet Base

文件：33.73 Kbytes Page：1 Pages