G-3 1/2 Miniature 2 Pin Base

WHERE INNOVATION COMES TO LIGHT

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HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

CM5001

Overview The CM5001 is an 8-bit OTP microcontroller. The chip uses a RISC architecture and can replace the PIC16C54/56 and CF745. The chip has hardware circuits such as pin wake-up, dynamically configurable pin pull-resist, low-voltage reset, etc., which is enhanced by the PIC16C54/56 function. G

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

CM5001

Overview The CM5001 is an 8-bit OTP microcontroller. The chip uses a RISC architecture and can replace the PIC16C54/56 and CF745. The chip has hardware circuits such as pin wake-up, dynamically configurable pin pull-resist, low-voltage reset, etc., which is enhanced by the PIC16C54/56 function. G

CM5001

Overview The CM5001 is an 8-bit OTP microcontroller. The chip uses a RISC architecture and can replace the PIC16C54/56 and CF745. The chip has hardware circuits such as pin wake-up, dynamically configurable pin pull-resist, low-voltage reset, etc., which is enhanced by the PIC16C54/56 function. G

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

T-5 Aviation Fluorescent Lamps

DESCRIPTION AND FEATURES Features: • Available in standard 4, 6, 8 and 13 watt ratings. • Both warm white (3100°K) and cool white (4200°K) colors. • Exceptional lamp-to-lamp consistency. • Miniature bi-pin and miniature pin-less bases. • Universal burning position. • Compatible with bot

T-5 Aviation Fluorescent Lamps

DESCRIPTION AND FEATURES Features: • Available in standard 4, 6, 8 and 13 watt ratings. • Both warm white (3100°K) and cool white (4200°K) colors. • Exceptional lamp-to-lamp consistency. • Miniature bi-pin and miniature pin-less bases. • Universal burning position. • Compatible with bot

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

T-5 Aviation Fluorescent Lamps

DESCRIPTION AND FEATURES Features: • Available in standard 4, 6, 8 and 13 watt ratings. • Both warm white (3100°K) and cool white (4200°K) colors. • Exceptional lamp-to-lamp consistency. • Miniature bi-pin and miniature pin-less bases. • Universal burning position. • Compatible with bot

T-5 Aviation Fluorescent Lamps

DESCRIPTION AND FEATURES Features: • Available in standard 4, 6, 8 and 13 watt ratings. • Both warm white (3100°K) and cool white (4200°K) colors. • Exceptional lamp-to-lamp consistency. • Miniature bi-pin and miniature pin-less bases. • Universal burning position. • Compatible with bot

T-5 Aviation Fluorescent Lamps

DESCRIPTION AND FEATURES Features: • Available in standard 4, 6, 8 and 13 watt ratings. • Both warm white (3100°K) and cool white (4200°K) colors. • Exceptional lamp-to-lamp consistency. • Miniature bi-pin and miniature pin-less bases. • Universal burning position. • Compatible with bot

T-5 Aviation Fluorescent Lamps

DESCRIPTION AND FEATURES Features: • Available in standard 4, 6, 8 and 13 watt ratings. • Both warm white (3100°K) and cool white (4200°K) colors. • Exceptional lamp-to-lamp consistency. • Miniature bi-pin and miniature pin-less bases. • Universal burning position. • Compatible with bot

MicroTip

Product Description Chemtronics Microtip is designed for precision applications needing pinpoint accuracy. The tapered porous polyvinylidene fluoride tip is effective as a stylus or pick for areas with tight tolerances. The tip is attached to the handle without the use of potentially contaminatin

G-4 1/2 Miniature Bayonet Base

G-4 1/2 Miniature Bayonet Base G-4 1/2 Miniature Screw Base G-4 1/2 Miniature 2 Pin Base

G-4 1/2 Miniature Bayonet Base

G-4 1/2 Miniature Bayonet Base G-4 1/2 Miniature Screw Base G-4 1/2 Miniature 2 Pin Base

R-12 Single Contact Bayonet Base

R-12 Single Contact Bayonet Base, R-12 Double Contact Bayonet Base & G-6 Candelabra Screw Base

Four IGBTMOD??U-Series Module 50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from

Trench Gate Design Dual IGBTMOD??50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter connects are isolated

IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION UPS, NC machine, AC-Drive control, Servo, Welde

Dual IGBTMOD??U-Series Module 50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

Dual IGBTMOD 50 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

Dual IGBTMOD 50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a revers econnected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

Dual IGBTMOD 50 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack APPLICATION Brake

Chopper IGBTMOD 50 Amperes/1200 Volts

Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. All components and interco

IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack APPLICATION Brake

IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 1-element in a pack APPLICATION Brake

MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC ..................................................................... 50A ● VCES ............................................................600V ● Insulated Type ● CIB Module 3φ Inverter+3φ Converter+Brake ● UL Recognized Yellow Card No. E80276

CIB Module Three Phase Converter Three Phase Inverter Brake 50 Amperes/600 Volts

Description: Powerex CIB Modules are designed for use in switching applications. Each module consists of a three phase diode converter section, a three phase IGBT inverter section and a brake section. All components and interconnects are isolated from the heat sinking baseplate, offering simplifi

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .............….......................… 5 0 A Collector-emitter voltage VCES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ● Flat base Type ● Copper base plate ● Tin plating pin ter

Low Drive Power Discrete Super-Fast Recovery Free-Wheel Diode

Description: CIBs are low profile and thermally efficient. Each module consists of a three-phase diode converter section, a three-phase inverter section and a brake circuit. A thermistor is included in the package for sensing the baseplate temperature. 6th Generation CSTBT chips yield low loss.

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the

Six-IGBT IGBTMOD 50 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the

Six-IGBT IGBTMOD 50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the

Six-IGBT IGBTMOD 50 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

Trench Gate Design Six IGBTMOD??50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ..................................................................... 50A ● VCES ......................................................... 1200V ● Insulated Type ● 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Trench Gate Design Six IGBTMOD??50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isola

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ..................................................................... 50A ● VCES ......................................................... 1200V ● Insulated Type ● 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

IGBT MODULES HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ..................................................................... 50A ● VCES ......................................................... 1200V ● Insulated Type ● 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APP

Six IGBTMOD 50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APP

IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE ● IC..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APP