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Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE • IC ...................................................................400A • VCES ............................................................600V • Insulated Type • 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Trench Gate Design Dual IGBTMOD??400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ..........................................................600V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276

Dual IGBTMOD 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ..........................................................600V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276

IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ..........................................................600V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE IC ...................................................................400A VCES ............................................................600V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient

High Frequency Dual IGBTMOD??400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter connects are isolated

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES.......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc

Dual IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

Dual IGBTMOD??U-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient am

Dual IGBTMOD NFH-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconn

Dual IGBTMOD NFJ-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-con

Dual IGBTMOD 400 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES.......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ............................................................250V ● Insulated Type ● 2-elements in a pack APPLICATION DC choper, Inverters for battery source

Trench Gate Design Dual IGBTMOD??400 Amperes/250 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

Dual IGBTMOD 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

Dual IGBTMOD??NF-Series Module 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Dual IGBT A-Series Module 400 Amperes/1700 Volts

Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 2500V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 2500V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 3300V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................400A ● VCES ....................................................... 3300V ● Insulated Type ● 2-elements in a pack APPLICATION Inverters, Converters, DC c

Single IGBTMOD 400 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

● IC ….………………….…….. 400 A ● VCES ……………..…...….. 1200 V ● Flat base Type Copper (non-plating) base plate No accessory (terminal screw) attach ● RoHS Directive compliant APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc.

Single IGBTMOD??A-Series Module 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module con sists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast-recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering s

Single IGBTMOD 400 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

Single IGBTMOD??HVIGBT 400 Amperes/4500 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syste

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 4500V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 3300V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliabi

Trench Gate Design Single IGBTMOD??400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

MAGNETIC POWDER CORES

文件：35.7387 Mbytes Page：42 Pages

Raspberry Pi Compute Module 4 will remain in production until at least January 2028

文件：1.32833 Mbytes Page：7 Pages

Raspberry Pi Compute Module 4

文件：1.32974 Mbytes Page：7 Pages

树莓派

Raspberry Pi Compute Module 4

文件：1.32974 Mbytes Page：7 Pages

Raspberry Pi Compute Module 4

文件：1.32974 Mbytes Page：7 Pages

Toroidal Surface Mount Inductors

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

NOR GATE

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

COMPLEMENTARY METAL OXIDE SILICON

DUAL THREE INPUT NOR GATE PLUS INVERTER