HIGH POWER SWITCHING USE

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IGBT MODULES HIGH POWER SWITCHING USE

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Trench gate Field-Stop IGBT

FEATURES 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material 62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-applied Thermal Interface Material APPLICATIONS

IGBT MODULES HIGH POWER SWITCHING USE

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Dual IGBTMOD 300 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

HIGH POWER SWITCHING USE

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