HIGH POWER SWITCHING USE

● IC ...................................................................300A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

HIGH POWER SWITCHING USE

● IC ...................................................................300A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

Dual IGBTMOD NF-Series Module 300 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each tran sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter connects are isolated f

Half Bridge Module

FEATURES · VCE(sat) with positive temperature coefficient · Low VCE(sat) · Low switching losses · High current capability · Short circuit rated APPLICATIONS ·Motor drives ·Servo drives

Power Modules-IGBT Modules NF series CM300DY-12NF

IGBT MODULES HIGH POWER SWITCHING USE

文件：96.9 Kbytes Page：4 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

IGBT MODULES HIGH POWER SWITCHING USE

文件：96.9 Kbytes Page：4 Pages

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

Dual IGBTMOD 300 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from