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型号 功能描述 生产厂家 企业 LOGO 操作
CM2310

T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

CML

CM2310

T-1 3/4 Bi-Pin Base (.125)

文件:220.86 Kbytes Page:1 Pages

CML

CM2310

Trench MOSFET

AppliedPower

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

NTE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

STMICROELECTRONICS

意法半导体

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

CM2310产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Package:

    SOT-23

  • N/P:

    N

  • VDSS(V):

    60

  • VGS(V):

    ±20

  • ID(A):

    3

  • VGS(th) Min:

    1

  • VGS(th) Max:

    2

  • Rdson @VGS10V Typ(mΩ):

    86

  • Rdson @VGS10V Max(mΩ):

    100

  • Rdson @VGS4.5V Typ(mΩ):

    92

  • Rdson @VGS4.5V Max(mΩ):

    120

更新时间:2026-8-1 13:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
2025+
DIP
1000
原装进口价格优 请找坤融电子!
PHI
2450+
DIP
9850
只做原厂原装正品现货或订货假一赔十!
PHI
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
PHI
24+
DIP
75
PHI
2023+
DIP-42
50000
原装现货
PHI
2025+
DIP
1000

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