T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

Trench MOSFET

CM2305 is the P-Channel enhancement mode power field effect transistors with high cell density, trench technology. This high density process and design have been optimized switching performance and especially tailored to minimize on-state resistance. • VDS: -20V\n• RDSON (@VGS=-4.5V): < 42mΩ\n• RDSON (@VGS=-1.8V): < 75mΩ\n• Excellent on-resistance and DC current capability;

T-1 3/4 Bi-Pin Base (.125)

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Trench MOSFET

Trench MOSFET

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

丝印代码：A5***；P-Channel 1.25-W, 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

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PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages