Single Phase Bridge Rectifiers CM1500 Series

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

50 V, 15 A, high current silicon bridge rectifier

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0 100  Dynamic Advance

HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC···········································································1500A ● VCES····································································3300V ● 1-element in a Pack ● Insulated Type ● LPT-IGBT /

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 15 amperes.

HIGH POWER SWITCHING USE INSULATED TYPE

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HIGH POWER SWITCHING USE INSULATED TYPE

文件：426.36 Kbytes Page：9 Pages

HVIGBT模块 / HVIPM X系列 CM1500HC-66XB

Power Modules-HVIGBT Modules/HVIPM R series CM1500HG-66R

HIGH POWER SWITCHING USE INSULATED TYPE

文件：577.29 Kbytes Page：9 Pages

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme

Integrated Circuit 7-Step LED Driver Circuit

Description: The NTE1500 and NTE1501 are integrated circuits designed for driving 7–dot LED displays. The NTE1500 responds logarithmically to the input signal while the NTE1501 responds linearly. Because an adjustment pin for output current is provided, the brightness of the LED can be controll

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N