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CLF价格
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型号：CLF_280_CTP 品牌：Visual Communications Co 备注：这里有CLF多少钱，2024年最近7天走势，今日出价，今日竞价，CLF批发/采购报价，CLF行情走势销售排行榜，CLF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CLF | Standard : UL - IEC 300V - 250V 10A - 12A 文件：515.94 Kbytes Page：1 Pages | ELDECOEldeco Srl 亿德科电子有限公司 |  |   |
SPEAKER FEATURES •38mm •roundframe •0.25W •8Ω •ferritemagnet •PETcone | CUID CUI Devices |  | | |
Inductors for Power Circuits FEATURES 1.Magneticshieldtypewoundinductorforpowercircuits. 2.1to470µH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Thin-screenTVs,LCDs,AVequipment,STBs,LEDlights,industrialequipment | TDKTDK Corporation 东电化（中国）投资有限公司 |  | | |
18V Driver Transistor Built-In Synchronous Step-Down DC/DC Converter ■GENERALDESCRIPTION TheXC9248seriesis18Vbootstrapsynchronousstep-downDC/DCconverterwithbuilt-inNch-Nchdrivertransistors. Withaninputvoltagerangefrom4.5Vto18Vandamaximumoutputcurrentof2.2A,theseriesissuitablefordigitalhomeappliancepowersuppliesandcanbe | TOREXTOREX SEMICONDUCTOR LTD. 特瑞仕特瑞仕半导体株式会社 |  | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
CLF10060NI-D type FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55to+150°C(includingself-temperaturerise) 1to470μH,wideE-6serieslineupallowsforvarioususages. Operatingtemperaturerange:–55to+150°C(includingself-temperaturerise | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
Broadband RF power GaN HEMT Generaldescription CLF1G0035-100andCLF1G0035S-100arebroadbandgeneralpurpose100W amplifierswithfirstgenerationGaNHEMTtechnologyfromAmpleon.Frequencyof operationisfromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 100Wgeneralpurpo | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 |  | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0035-100PandCLF1G0035S-100Pare100Wgeneralpurposebroadband GaNHEMTsusablefromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 100WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0035-200PandCLF1G0035S-200Pare200Wgeneralpurposebroadband GaNHEMTsusablefromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 200WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Broadband RF power GaN HEMT Generaldescription CLF1G0035-50andCLF1G0035S-50arebroadbandgeneralpurpose50Wamplifiers withfirstgenerationGaNHEMTtechnologyfromAmpleon.Frequencyofoperationisfrom DCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 50Wgeneralpurposeb | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription CLF1G0035-100andCLF1G0035S-100arebroadbandgeneralpurpose100W amplifierswithfirstgenerationGaNHEMTtechnologyfromAmpleon.Frequencyof operationisfromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 100Wgeneralpurpo | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0035-100PandCLF1G0035S-100Pare100Wgeneralpurposebroadband GaNHEMTsusablefromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 100WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0035-200PandCLF1G0035S-200Pare200Wgeneralpurposebroadband GaNHEMTsusablefromDCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 200WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription CLF1G0035-50andCLF1G0035S-50arebroadbandgeneralpurpose50Wamplifiers withfirstgenerationGaNHEMTtechnologyfromAmpleon.Frequencyofoperationisfrom DCto3.5GHz. Featuresandbenefits FrequencyofoperationisfromDCto3.5GHz 50Wgeneralpurposeb | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0060-10andCLF1G0060S-10are10WgeneralpurposebroadbandGaN HEMTsusablefromDCto6.0GHz. Featuresandbenefits FrequencyofoperationisfromDCto6.0GHz 10WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) Hig | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0060-30andCLF1G0060S-30are30WgeneralpurposebroadbandGaN HEMTsusablefromDCto6.0GHz. Featuresandbenefits FrequencyofoperationisfromDCto6.0GHz 30WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) Hig | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0060-10andCLF1G0060S-10are10WgeneralpurposebroadbandGaN HEMTsusablefromDCto6.0GHz. Featuresandbenefits FrequencyofoperationisfromDCto6.0GHz 10WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) Hig | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF1G0060-30andCLF1G0060S-30are30WgeneralpurposebroadbandGaN HEMTsusablefromDCto6.0GHz. Featuresandbenefits FrequencyofoperationisfromDCto6.0GHz 30WgeneralpurposebroadbandRFPowerGaNHEMT Excellentruggedness(VSWR=10:1) Hig | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF3H0035-100andCLF3H0035S-100are100Wgeneralpurpose,unmatched broadbandGaNHEMTtransistorsthatareusableinthefrequencyrangefrom DCto3.5GHz.Thedeviceutilizesathermallyenhancedpackagewhichsupportsboth CWandpulsedapplications. Featuresand | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF3H0035-100andCLF3H0035S-100are100Wgeneralpurpose,unmatched broadbandGaNHEMTtransistorsthatareusableinthefrequencyrangefrom DCto3.5GHz.Thedeviceutilizesathermallyenhancedpackagewhichsupportsboth CWandpulsedapplications. Featuresand | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF3H0035-100andCLF3H0035S-100are100Wgeneralpurpose,unmatched broadbandGaNHEMTtransistorsthatareusableinthefrequencyrangefrom DCto3.5GHz.Thedeviceutilizesathermallyenhancedpackagewhichsupportsboth CWandpulsedapplications. Featuresand | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF3H0060-30andCLF3H0060S-30are30Wgeneralpurpose,unmatched broadbandGaN-SiCHEMTtransistorsthatareusableinthefrequencyrangefromDCto 6.0GHz.ThedeviceutilizesathermallyenhancedpackagewhichsupportsbothCWand pulsedapplications. Featuresan | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF3H0060-30andCLF3H0060S-30are30Wgeneralpurpose,unmatched broadbandGaN-SiCHEMTtransistorsthatareusableinthefrequencyrangefromDCto 6.0GHz.ThedeviceutilizesathermallyenhancedpackagewhichsupportsbothCWand pulsedapplications. Featuresan | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Broadband RF power GaN HEMT Generaldescription TheCLF3H0060-30andCLF3H0060S-30are30Wgeneralpurpose,unmatched broadbandGaN-SiCHEMTtransistorsthatareusableinthefrequencyrangefromDCto 6.0GHz.ThedeviceutilizesathermallyenhancedpackagewhichsupportsbothCWand pulsedapplications. Featuresan | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Inductors for Power Circuits Wound Ferrite FEATURES Magneticshieldtypewoundinductorforpowercircuits. Itcanbeusedatawidetemperaturerange.–55～+150°C（Includingself-temperaturerise) 1to470μH,wideE-6Serieslineupallowsforvarioususages. APPLICATION Equipmentusedforautomobiles(ECM,airbags,headl | TDKTDK Corporation 东电化（中国）投资有限公司 | | |
CLF产品属性
- 类型
描述
- 型号
CLF
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Visual
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5MM LED LENS CAP STD CLR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SanRex 三社整流桥 |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
MICROCHIP |
22+ |
SMD8 |
4493 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
|||
TDK/东电化 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
TDK/东电化 |
21+ |
SMD |
6000 |
原装正品 |
|||
TDK/东电化 |
22+ |
SMD |
35000 |
原装正品 |
|||
Hammond |
22+ |
NA |
155 |
加我QQ或微信咨询更多详细信息, |
|||
原厂 |
21+ |
N/A |
10000 |
只做现货 |
|||
TDK/东电化 |
标准封装 |
52891 |
一级代理原装正品现货期货均可订购 |
||||
TDK/东电化 |
23+ |
SMD |
10000 |
公司只做原装正品 |
|||
SANREX/三社 |
22+ |
NA |
1120 |
中国航天工业部战略合作伙伴行业领导者 |
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- CLI305
- CLI300
- CLI230
- CLI220
- CLI210
- CLI200
- CLH07
- CLH05
- CLH02
- CLH01
- CLG-60
- CLG-240
- CLG-150
- CLG-100
- CLFKNS
- CLF7045
- CLF-280
- CLF-110
- CLF-105
- CLF10040T-1R5N-H
- CLF10040T-1R5N-D
- CLF10040T-1R5N
- CLF10040T-1R0N-H
- CLF10040T-1R0N-D
- CLF10040T-151M-H
- CLF10040T-151M-D
- CLF10040T-151M
- CLF10040T-150M-H
- CLF10040T-150M-D
- CLF10040T-150M
- CLF10040T-101M-H
- CLF10040T-101M-D
- CLF10040T-101M
- CLF10040T-100M-H
- CLF10040T-100M-D
- CLF10040T-100M
- CLF0381MP-1
- CLF_280_RTP
- CLF_280_CTP
- CLEV663B,699
- CLEV663,699
- CLEO35A
- CLED155
- CLE-9/16
- CLE549W
- CLE546W
- CLE545W
- CLE539W
- CLE539
- CLE536W
- CLE536
- CLE535W
- CLE535
- CLE509
- CLE501
- CLE445W
- CLE436W
- CLE436
- CLE435W
- CLE435
- CLE400F
- CLE390
- CLE-3/4
- CLE-190-01-G-DV
- CLE-160-01-G-DV-A
- CLE-150-01-G-DV-P
- CLE-11/16
- CLE-108-01-G-DV-TR
- CLE-107-01-G-DV
- CLE-1/4
- CLE-1/2
- CLE-1
- CL-DEMOKIT-CAN40
- CL-DB-1CB-A2T
- CL-DA-1CB4-A2T
- CL-DA-1BB4-A2T
- CLD-51-30030
- CLD50D240-C100
- CLD20B-TP
CLF数据表相关新闻
CLC006AJE
CLC006AJENATIONALSEMICONDUCTOR20+标准封装 CM8062000911406INTEL20+标准封装 COMP-6DIDANTONAINDUSTRIES20+标准封装 CS5361-KZZCIRRUSLOGIC20+标准封装 CT622LYF-820KCENTRALTECHNOLOGIES20+标准封装 C-13-155-T3-SSC7C-G5LUMINENT/OIC20+标准封装 C15505-0001375BOTHER20+标准封装 C15509-0
2021-6-5CLM2D-RCC-CZ0C0BB3
標準LED-表面貼裝(SMD)619nmto624nmRed4500mcdto11200mcd
2020-12-16CLA50E1200HB
CLA50E1200HB，全新原装当天发货或门市自取0755-82732291.
2020-6-25CLA30MT1200NPZ
深圳科雨电子有限公司，联系人：卢小姐手机：18975515225 原装正品大量现货，有需要的可以联系我QQ:97877805微信：wei555222777
2019-5-17CLM285-12-微功耗电压基准二极管
产品说明该CLM285/385-1.2为微2端子带隙稳压二极管。操作在宽电流范围为10mA与低动态阻抗和20mA的稳定温度特性。Calogic利用片上修剪提供严格的电压公差。这些设备都是优秀的便携式仪表，监管机构或通用模拟电路与电池寿命接近保质期。订购信息零件包装最大温度系数（ppm）温度范围CLM285Y1SOIC封装100-40oC至+85oC的CLM385T1TO-46100
2013-3-24CLM2931-低压差稳压器
产品说明该CLM2931是一个积极的低功率电压调节器。这设备是在使用电池供电的理想选择应用，如无绳电话，无线电控制系统和便携式电脑。该CLM2931功能非常低静态电流（0.4毫安）和非常低的输出电压下降（典型值在轻负载为100mA时为300mV和50mV的）。其他功能包括开/关输入，使逻辑兼容稳压器接通和关闭。该稳压器输出电压可在内部接脚绑为5V，3V，3.3V，3.5V，4.0V，4.5V或3V至编程24V与外部电阻对。使用Calogic的设计，工艺和检测技术使CLM2931优超过同类产品。...特点·5V，3.3V，3.5V，4
2013-1-31
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