Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

Silicon Limiter Diodes, Packaged and Bondable Chips

Silicon Limiter Diode Chips

Description Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter di

Silicon Limiter Diodes, Packaged and Bondable Chips

Description Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter di

Surface-Mount Limiter Diode

Features • Low thermal resistance: 29 °C/W • Typical threshold level: +20 dBm • Low capacitance: 0.60 pF • Low profile, ultra-miniature QFN (3-pin, 2 x 2 mm) package (MSL1, 260 °C per JEDEC J-STD-020) Description The CLA4608-085LF is a surface-mountable, low-capacitance silicon PIN limit

Surface-Mount Limiter Diode

Features • Low thermal resistance: 29 °C/W • Typical threshold level: +20 dBm • Low capacitance: 0.60 pF • Low profile, ultra-miniature QFN (3-pin, 2 x 2 mm) package (MSL1, 260 °C per JEDEC J-STD-020) Description The CLA4608-085LF is a surface-mountable, low-capacitance silicon PIN limit

Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

Silicon Limiter Diodes, Packaged and Bondable Chips

Description Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter di

Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

Silicon Limiter Diodes, Packaged and Bondable Chips

Description Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter di

Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

Silicon Limiter Diodes, Packaged and Bondable Chips

Description Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter di

Silicon Limiter Diodes, Packaged and Bondable Chips

Description Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon technology resulting in high resistivity and tightly controlled base width PIN limiter di

Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

Established Skyworks limiter diode process

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封装/外壳：模具 包装：托盘 描述：DIODE LIMITER SILICON 120-180V 分立半导体产品 二极管 - 射频

Limiter Diode Chips

封装/外壳：2-VDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE PIN 180V 2W 3QFN 分立半导体产品 二极管 - 射频

Plastic Surface Mount (SMT) Limiter Diodes

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

TO-3 POWER TRANSISTOR SOCKET & MOUNTING KITS

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Networks

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Networks

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Varnished Chokes

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