丝印代码：CL857；LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS

Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por

丝印代码：CL857；LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS

Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por

丝印代码：CL857；LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS

Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of