Plastic-Encapsulate MOSFETS

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N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126F package. Lead-free plating ; RoHS compliant.