COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955 and CJD3055 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

文件：425.65 Kbytes Page：2 Pages

Surface mount Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

文件：425.65 Kbytes Page：2 Pages

silicon power transistors

文件：563.03 Kbytes Page：2 Pages

INFRARED IC INTERNAL INSPECTION SYSTEM

The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki

1500 MHz Center Frequency

文件：52.5 Kbytes Page：3 Pages

Wire Connectors

文件：401.38 Kbytes Page：1 Pages

1500 MHz Bandpass Filter

文件：72.2 Kbytes Page：3 Pages

ADSL LINE TRANSFORMER

文件：277.44 Kbytes Page：1 Pages