型号 功能描述 生产厂家&企业 LOGO 操作
CJB01N65B

TO-263-2L Plastic-Encapsulate MOSFETS

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ZPSEMIZP Semiconductor

至尚臻品

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A 10V CEB01N65 650V 10.5Ω 1.3A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 0.9A, RDS(ON) = 15W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A 10V CEB01N65 650V 10.5Ω 1.3A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

CET

华瑞

更新时间:2025-8-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ/长电
24+
NA/
12000
优势代理渠道,原装正品,可全系列订货开增值税票
CJ/长电
25+
TO-263
12000
原装正品,假一罚十!
CJ
1912
SOT-89
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CJ/长电
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
CJ/长电
23+
TO263
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
CJ/长晶
2511
TO-263-2L
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
CJ/长电
2022+
TO-263
50000
原厂代理 终端免费提供样品
CJ/长电
24+
TO-263
60000
CJ
23+
SOT-89
50000
全新原装正品现货,支持订货
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择

CJB01N65B数据表相关新闻