型号 功能描述 生产厂家 企业 LOGO 操作
CJAC50P03S

Trench MOS

JSCJ

长晶科技

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

P-Channel 30 V (D-S) MOSFET

文件:1.0229 Mbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

文件:1.02287 Mbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件:967.38 Kbytes Page:8 Pages

VBSEMI

微碧半导体

更新时间:2025-9-28 14:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NK/南科功率
2025+
DFN5060-8
986966
国产
CJ/长晶
2511
PDFNWB5×6-8L
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
CJ(江苏长电/长晶)
2447
PDFNWB5x6-8L
105000
5000个/圆盘一级代理专营品牌!原装正品,优势现货,
长晶科技
21+
PDFNWB5*6-8L
35
全新原装鄙视假货
CJ(江苏长电/长晶)
20+
PDFNWB-8L-EP(5x6)
5000
CJ(江苏长电/长晶)
25+
PDFNWB-8L-EP(5x6)
500000
源自原厂成本,高价回收工厂呆滞

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