可控硅

Integrated Circuit High Speed, 6 Diode Array, Common Anode

Description: The NTE1680 is a common anode monolithic array of high speed switching diodes in a 7–Lead SIP type package. Features: ● High Speed Switching Time: trr = 4.0ns Typ. ● Low Capacitance: Ct = 5.0pf TYP. ● Small Size Enables High Density Mounting

16 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 16.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surge capacity

D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 16.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MILS-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge

16A ISOLATION SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring for Transient Protection ● Low Forward Voltage Drop ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

DESCRIPTION The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ■ 915 - 960 MHz ■ 24 VOLTS ■ CLASS AB PUSH PULL ■ INTERNAL INPUT MATCHING ■ DESIGNED FOR H