P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.3 Ampere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION *

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 2.3 Ampere FEATURE ​​​​​​​* Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICAT

P-Channel Enhancement Mode Field Effect Transistor

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

SOT-23 Plastic-Encapsulate MOSFETS

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-2.8A竊?20V P-CHANNEL MOSFET

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10V P-Channel Enhanced MOS FET

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