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N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 1.1 Ampere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION *

PNP Switching Transistor

VOLTAGE 80 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-23) * Low Collector-Emitter saturation voltage. * High breakdown voltage.

NPN SILICON Transistor

VOLTAGE 100 Volts CURRENT 5 Ampere FEATURE ​​​​​​​* Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. APPLICATION * Telephony and proferssional communction equipment. * Other switching applications.

PNP SILICON Transistor

VOLTAGE 100 Volts CURRENT 5 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. APPLICATION * Telephony and proferssional communction equipment. * Other switching applications.

C0G HT 260C, Ceramic, 0.01 uF, 5, 25 VDC, C0G, SMD, MLCC, High Temperature, 260C, 1206

General Information Series C0G HT 260C Style SMD Chip Description SMD, MLCC, High Temperature, 260C Features High Temperature, Low ESR RoHS Yes Termination Gold Marking No AEC-Q200 No Component Weight 25 mg Miscellaneous Gold (Au) 30 - 70 micro inches. Shelf Life 78 Weeks MSL 1 Spec

CHT High Temperature 260°C, C0G Dielectric, 10 –100 VDC (Industrial Grade)

Overview KEMET’s CHT High Temperature 260°C surface mount Multilayer Ceramic Capacitors (MLCCs) are constructed of a robust and proprietary C0G/NP0 base metal electrode (BME) dielectric system that offers industry-leading performance at extreme temperatures. These devices are specifically de

C0G HT 260C, Ceramic, 0.015 uF, 5, 25 VDC, C0G, SMD, MLCC, High Temperature, 260C, 1210

General Information Series C0G HT 260C Style SMD Chip Description SMD, MLCC, High Temperature, 260C Features High Temperature, Low ESR RoHS Yes Termination Gold Marking No AEC-Q200 No Component Weight 40 mg Miscellaneous Gold (Au) 30 - 70 micro inches. Shelf Life 78 Weeks MSL 1 Spec

Dual Silicon Transistor

VOLTAGE 20 Volts CURRENT 300 mAmpere FEATURE * Small surface mounting type. (SC-74A) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Both the NPN digital silicon transistor in one package. * Built in bia

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SC-59) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Servo mo

N-Channel Enhancement Mode Field Effect Transistor

数字温湿度传感器模块

PNP Transistor

封装/外壳：1206（3216 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 1206 10NF 25VDC C0G 5% 电容器 陶瓷电容器