824 to 849 MHz 28.5 dBm, Cellular InGaP HBT Amplifier Module

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SMD Schottky Barrier Diode

Features IO = 200mA VR = 30V - Designed for mounting on small surface. - Extremely thin package. - Low drop-down voltage. - Majority carrier conduction - Lead-free device Mechanical Data - Case :0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated, sold

SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction. Mechanical data Case: 1005 (2512) Standard package , molded plastic. Terminals: Gold plated, solderable per MIL

SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction Mechanical data Case: 0805(2012) Standard package , molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method

SMD Schottky Barrier Diode

Io = 200 mA VR = 30 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction. Mechanical data Case: 0603 (1608) Standard package , molded plastic. Terminals: Gold plated, solderable per MIL