P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 7.7 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

P-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode MOSFET

Features • 20V/10A, RDS(ON) = 10mΩ(typ.) @ VGS = 4.5V RDS(ON) = 15mΩ(typ.) @ VGS = 2.5V • Super High Density Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Pow

N-Channel Enhancement Mode MOSFET

Features • 20V/10A, RDS(ON) = 10mΩ(typ.) @ VGS = 4.5V RDS(ON) = 15mΩ(typ.) @ VGS = 2.5V • Super High Density Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Pow

N-Channel Enhancement Mode MOSFET

Features • 20V/10A, RDS(ON) = 10mΩ(typ.) @ VGS = 4.5V RDS(ON) = 15mΩ(typ.) @ VGS = 2.5V • Super High Density Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Pow

MACHINE SCREW PAN PHILLIPS 10-32

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Simple Drive Requirement, Small Size & Lower Profile

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