N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT55Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

AM62AxSitara™Processors

1Features ProcessorCores: •UptoQuadArm®Cortex®-A53microprocessor subsystematupto1.4GHz –Quad-coreCortex-A53clusterwith512KBL2 sharedcachewithSECDEDECC –EachA53corehas32KBL1DCachewith SECDEDECCand32KBL1ICachewithParity protection •Single-coreArm®Cor

AM62AxSitara™Processors

1Features ProcessorCores: UptoQuad64-bitArm®Cortex®-A53 microprocessorsubsystematupto1.4GHz –Quad-coreCortex-A53clusterwith512KBL2 sharedcachewithSECDEDECC –EachA53corehas32KBL1DCachewith SECDEDECCand32KBL1ICachewithParity protection Single-coreArm®

AM62AxSitara™Processors

1Features ProcessorCores: •UptoQuad64-bitArm®Cortex®-A53 microprocessorsubsystematupto1.4GHz –Quad-coreCortex-A53clusterwith512KBL2 sharedcachewithSECDEDECC –EachA53corehas32KBL1DCachewith SECDEDECCand32KBL1ICachewithParity protection •Single-coreA

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,60A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandlingcapability. ■TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,60A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandlingcapability. ■TO-220&TO-263package.