N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

AM62Ax Sitara™ Processors

1 Features Processor Cores: • Up to Quad Arm® Cortex®-A53 microprocessor subsystem at up to 1.4 GHz – Quad-core Cortex-A53 cluster with 512KB L2 shared cache with SECDED ECC – Each A53 core has 32KB L1 DCache with SECDED ECC and 32KB L1 ICache with Parity protection • Single-core Arm® Cor

AM62Ax Sitara™ Processors

1 Features Processor Cores: Up to Quad 64-bit Arm® Cortex®-A53 microprocessor subsystem at up to 1.4 GHz – Quad-core Cortex-A53 cluster with 512KB L2 shared cache with SECDED ECC – Each A53 core has 32KB L1 DCache with SECDED ECC and 32KB L1 ICache with Parity protection Single-core Arm®

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 55 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.