CHE价格

参考价格:¥798.6223

型号:CHE100W-24S05 品牌:Cincon 备注:这里有CHE多少钱,2024年最近7天走势,今日出价,今日竞价,CHE批发/采购报价,CHE行情走势销售排行榜,CHE报价。
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CHE

Power Entry Module with Switch

文件:420.05 Kbytes Page:4 Pages

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

12-40GHz Wide Band Detector

GaAsMonolithicMicrowaveICinSMDleadlesspackage Description TheCHE1270-QAGisadetectorthatintegratesamatcheddetectordiode(Vdet)andareferencediode(Vref). Itisdesignedforawiderangeofapplicationswhereanaccuratetransmittedpowercontrolisrequired,typicallycommerc

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

UMS

12-40GHz Wide Band Detector

GaAsMonolithicMicrowaveICinSMDleadlesspackage Description TheCHE1270-QAGisadetectorthatintegratesamatcheddetectordiode(Vdet)andareferencediode(Vref). Itisdesignedforawiderangeofapplicationswhereanaccuratetransmittedpowercontrolisrequired,typicallycommerc

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

UMS

12-40GHz Wide Band Detector

GaAsMonolithicMicrowaveICinSMDleadlesspackage Description TheCHE1270-QAGisadetectorthatintegratesamatcheddetectordiode(Vdet)andareferencediode(Vref). Itisdesignedforawiderangeofapplicationswhereanaccuratetransmittedpowercontrolisrequired,typicallycommerc

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

UMS

Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE ​​​​​​​*Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTA143Zchipsinapackage. *Builtinbiasresistor(R1=

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE ​​​​​​​*Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *towCHDTA144Echipsinapackage. *Builtinbiasresistor(R1=47

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTA114Tchipsinapackage. *Builtinbiasresistor(R1=10kΩ,T

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *towCHDTA123Jchipsinapackage. *Builtinbiasresistor(R1=2.2kΩ,T

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTA144Tchipsinapackage. *Builtinbiasresistor(R1=47kΩ,T

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE ​​​​​​​*Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTA143Xinonepackage. *Builtinbiasresistor(R1

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Dual Digital Silicon Transistor

FEATURE *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTA114Ychipsinapackage. *Builtinbiasresistor(R1=10kΩ,Typ.) *Smallsurfacemountingtype.(SOT-553) APPLICATION *Switchingcircui

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTA123Jchipsinapackage. *Builtinbiasresistor(R1=2.2kΩ,

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTA114Echipsinapackage. *Builtinbiasresistor(R1=10kΩ,Ty

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *towCHDTA144Echipsinapackage. *Builtinbiasresistor(R1=47kΩ,Typ

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTA144E&CHDTC144Einonepackage. *Builtinbiasres

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTA143Z&CHDTC143Zinonepackage. APPLICATION *Swi

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTA124E&CHDTC124Einonepackage. *Builtinbiasres

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Dual Digital Silicon Transistor

DTr1:VOLTAGE50VoltsCURRENT70mAmpere DTr2:VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. APPLICATION *Switchingc

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTA114E&CHDTC114Einonepackage. *Builtinbiasres

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT70mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTA114Y&CHDTC114Yinonepackage. *Builtinbiasres

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Power Management (Dual Transistor)

Tr1:VOLTAGE50VoltsCURRENT150mAmpere DTr2:VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SA1774&CHDTC123Einonepackage. *Builtinbias

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Power Management (Dual Transistor)

Tr1:VOLTAGE50VoltsCURRENT150mAmpere DTr2:VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SA1774&CHDTC144Einonepackage. *Builtinbiasr

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Power Management (Dual Transistor)

Tr1:VOLTAGE50VoltsCURRENT150mAmpere DTr2:VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SC4617&CHDTC123Einonepackage. *Builtinbias

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Power Management (Dual Transistor)

Tr1:VOLTAGE50VoltsCURRENT150mAmpere DTr2:VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SC4617&CHDTC144Einonepackage. *Builtinbiasr

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Power Management (Dual Transistor)

Tr1:VOLTAGE12VoltsCURRENT0.5Ampere DTr2:VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SA2018&CHDTC114Einonepackage. *Builtinbiasresistor(R1=10kΩ,Typ.) *Smallsurfacemo

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Power Management (Dual Transistor)

Tr1:VOLTAGE12VoltsCURRENT0.5Ampere DTr2:VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SC5585&CHDTC114Einonepackage. *Builtinbiasre

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Power Management (Dual Transistor)

Tr1:VOLTAGE50VoltsCURRENT150mAmpere DTr2:VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SA1774&CHDTC114Einonepackage. *Builtinbiasr

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Power Management (Dual Transistor)

Tr1:VOLTAGE50VoltsCURRENT150mAmpere DTr2:VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SC4617&CHDTC114Einonepackage. *Builtinbiasr

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Power Management (Dual Transistor)

Tr1:VOLTAGE12VoltsCURRENT0.5Ampere DTr2:VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SA2018&CHDTC123Einonepackage. *Builtinbiasr

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Power Management (Dual Transistor)

Tr1:VOLTAGE12VoltsCURRENT0.5Ampere DTr2:VOLTAGE50VoltsCURRENT100mAmpere FEATURE ​​​​​​​*Smallsurfacemountingtype.(SOT-563) *Powerswitchingcircuitinasinglepackage. *Mountingcostandareacanbecutinhalf. *Boththe2SC5585&CHDTC144Einonepackage. *Builtin

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedtwoCHDTC123Jtransistorsinonepackage. *Builti

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NPN Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *twoCHDTC124Echipsinonepackage. *Builtinbiasresistor(R1=22kΩ,

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTC144Etransistorsinonepackage. *Builtinbiasresistor(R1=

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NPN Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *Builtinbiasresistor(R1=4.7kΩ,Typ.) *TwoCHDTC143Tchipsinonepackage. *Smallsurfacemountingtype.(

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTC114Tinonepackage. *Builtinbiasresistor(R1=10kΩ,

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NPN Digital Silicon Transistor

VOLTAGE50VoltsCURRENT70mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *twoCHDTC114Ychipsinonepackage. *Builtinbiasresistor(R1=10kΩ,

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CHENMKO

CHENMKO

Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTC144Tinonepackage. *Builtinbiasresistor(R1=47kΩ,

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NPN Digital Silicon Transistor

VOLTAGE50VoltsCURRENT70mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *twoCHDTC143Zchipsinonepackage. *Builtinbiasresistor(R1=10kΩ,

CHENMKOCHENMKO

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-553) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTC114Echipsinonepackage. *Builtinbiasresistor(R1=10kΩ,

CHENMKOCHENMKO

CHENMKO

CHENMKO

Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedtwoNPNtransistorsinonepackage. *TwoCHDTC23J

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT50mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTC114Echipsinonepackage. *Builtinbiasresistor(R1=10kΩ,

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NPN Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *twoCHDTC124Echipsinonepackage. *Builtinbiasresistor(R1=22kΩ,

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Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTC144Etransistorsinonepackage. *Builtinbiasresistor(R1=

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NPN Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. ​​​​​​​*TwoCHDTC143Tchipsinonepackage. *Builtinbiasresistor(R

CHENMKOCHENMKO

CHENMKO

CHENMKO

Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *BoththeCHDTC114Tinonepackage. *Builtinbiasresistor(R1=10kΩ,

CHENMKOCHENMKO

CHENMKO

CHENMKO

Dual Digital Silicon Transistor

VOLTAGE50VoltsCURRENT30mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwoCHDTC144Etransistorsinonepackage. *Builtinbiasresistor(R1=

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Dual Silicon Transistor

VOLTAGE12VoltsCURRENT0.5Ampere FEATURE *Smallsurfacemountingtype.(SOT-563) *Lowcob.Cob=6.5pF(Typ.) *LowsaturationvoltageVCE(sat)=-0.25V(max.)(IC=200mA) *Highsaturationcurrentcapability. *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Twothe2SA2018inone

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Twothe2SA1037Kinonepackage. *Lowcob.Cob=4.0pF(Typ.) *Highsaturationcurrentcapability. *PC=150mW(Total),120mWperelementmustnotbeexceeded. *LowsaturationvoltageVCE(sat)=-0.5V(max.)

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE *Twothe2SA1037Kinonepackage. *Lowcob.Cob=4.0pF(Typ.) *Highsaturationcurrentcapability. *PC=150mW(Total),120mWperelementmustnotbeexceeded. *LowsaturationvoltageVCE(sat)=-0.5V(max.)(IC=50mA) *PNPSiliconTransistor *Sma

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *LowsaturationvoltageVCE(sat)=-0.5V(max.)(IC=50mA) *Lowcob.Cob=4.0pF(Typ.) *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Highsaturationcurrentcapability. *Twothe2SA1037Kinone

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Dual Silicon Transistor

VOLTAGE15VoltsCURRENT500mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *Twothe2SC5585inonepackage. *Lowcob.Cob=7.5pF(Typ.) *Highsaturationcurrentcapability. *PC=150mW(Total),120mWperelementmustnotbeexceeded. *LowsaturationvoltageVCE(sat)=0.25V(max.)(

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *LowsaturationvoltageVCE(sat)=0.4V(max.)(IC=50mA) *Lowcob.Cob=2.0pF(Typ.) *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Highsaturationcurrentcapability. *Twothe2SC2412Kinone

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *LowsaturationvoltageVCE(sat)=0.4V(max.)(IC=50mA) *Lowcob.Cob=2.0pF(Typ.) *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Highsaturationcurrentcapability. *Twothe2SC2412Kinone

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE ​​​​​​​*Smallsurfacemountingtype.(SOT-553) *Includesa2SC2412Kanda2SA1037Kinonepackage. *Highsaturationcurrentcapability. *PC=150mW(Total). APPLICATION *SmallSignalAmplifier.

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *LowsaturationvoltageVCE(sat)=0.5V(max.)(IC=50mA) *Lowcob.Cob=4.0pF(Typ.) *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Highsaturationcurrentcapability. *Boththe2SC2412K&

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Dual Silicon Transistor

VOLTAGE50VoltsCURRENT150mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *LowsaturationvoltageVCE(sat)=0.5V(max.)(IC=50mA) *Lowcob.Cob=4.0pF(Typ.) *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Highsaturationcurrentcapability. *Boththe2SC2412K&

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Dual Silicon Transistor

VOLTAGE15VoltsCURRENT500mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *LowsaturationvoltageVCE(sat)=0.25V(max.)(IC=200mA) *Lowcob.Cob=7.5pF(Typ.) *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Highsaturationcurrentcapability. *Boththe2SC5585&

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Dual Silicon Transistor

NPN:VOLTAGE60VoltsCURRENT150mAmpere PNP:VOLTAGE15VoltsCURRENT500mAmpere FEATURE *Smallsurfacemountingtype.(SOT-563) *PC=150mW(Total),120mWperelementmustnotbeexceeded. *Highsaturationcurrentcapability. *Boththe2SC2412K&2SA2018inonepackage. *NPN/PNP

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100 WATT 2:1/4:1 INPUT DC-DC CONVERTERS SINGLE OUTPUT

文件:211.06 Kbytes Page:2 Pages

CinconCincon

Cincon

Cincon

100 WATT 2:1/4:1 INPUT DC-DC CONVERTERS SINGLE OUTPUT

文件:211.06 Kbytes Page:2 Pages

CinconCincon

Cincon

Cincon

CHE产品属性

  • 类型

    描述

  • 型号

    CHE

  • 制造商

    Cooler Master Co., Ltd.

  • 功能描述

    HEATSINK AND FAN - Bulk

更新时间:2024-5-30 19:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UMS
专业军工
NA
1000
只做原装正品
CHEC
SSOP28
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
NISSEI
06+
SMD4532
290
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TERAYON
1738+
BGA
8529
科恒伟业!只做原装正品,假一赔十!
UMS
三年内
1983
纳立只做原装正品13590203865
CHIP
23+
SOP
20000
原装正品 欢迎咨询
churod
22+
NA
518000
明嘉莱只做原装正品现货
CHE
2020+
SOP
35000
100%进口原装正品公司现货库存
UMS
23+
QFN
98900
原厂原装正品现货!!
UMS
2021+
DIE
3000
十年专营原装现货,假一赔十

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