X-band HBT High Power Amplifier

Description The CHA7012 chip is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components

X-band HBT High Power Amplifier

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X-band HBT High Power Amplifier

文件：408.35 Kbytes Page：10 Pages

X-band HBT High Power Amplifier

文件：397.22 Kbytes Page：10 Pages

X-band HBT High Power Amplifier

文件：408.35 Kbytes Page：10 Pages

X-band HBT High Power Amplifier

文件：397.22 Kbytes Page：10 Pages

X-band HBT High Power Amplifier

X-band HBT High Power Amplifier

文件：397.22 Kbytes Page：10 Pages

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

Direct-acting 3/2-way plunger valve

The 7012 valve is a direct-acting plunger valve. The stopper and the core guide tube are welded together to increase pressure resistance and leak-tightness. Various housing and seal material combinations are available depending on the actual application. A Bürkert-specific flange variant (SFB)

Male Pins

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DC-PROZESSKALIBRATOR

文件：1.37638 Mbytes Page：4 Pages

Inside/Outside DC Block

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