PNP SILICON Transistor

VOLTAGE 80 Volts CURRENT 1 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. ​​​​​​​APPLICATION * Telephony and proferssional communction equipment. * Other switching

PNP SILICON Transistor

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res