位置:首页 > IC中文资料第6916页 > CGRA152

型号 功能描述 生产厂家 企业 LOGO 操作
CGRA152

SMD Genenal Purpose Rectifier

文件:63.08 Kbytes Page:2 Pages

COMCHIP

典琦

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

PANASONIC

松下

Silicon epitaxial planar type

Features 1. Short reverse recovery time trr 2. Small terminal capacitance, Ct

PANASONIC

松下

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

PANASONIC

松下

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in as original 6 pin mini-mold that is smalle

NEC

瑞萨

CGRA152产品属性

  • 类型

    描述

  • 型号

    CGRA152

  • 制造商

    COMCHIP

  • 制造商全称

    Comchip Technology

  • 功能描述

    SMD Genenal Purpose Rectifier

更新时间:2026-5-23 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
COMCHIP
23+
原厂正规渠道
5000
专注配单,只做原装进口现货

CGRA152数据表相关新闻

  • CH0402-150RGFPT 高頻/RF電阻 50mWatt 150ohms 2% Flip Chip

    CH0402-150RGFPT 高頻/RF電阻 50mWatt 150ohms 2% Flip Chip

    2023-2-3
  • CGHV96050F2

    射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 7.9-9.6GHz, 50 Watt

    2019-12-7
  • CGHV50200F

    射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 4.4-5.0GHz, 200 Watt

    2019-12-7
  • CGHV60075D5

    射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-6.0GHz, 75 Watt

    2019-12-7
  • CH236

    CH236,全新原装当天发货或门市自取0755-82732291.

    2019-9-2
  • CH315

    CH315,全新原装当天发货或门市自取0755-82732291.

    2019-9-1