130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

Description Wolfspeed’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to

130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications

The CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to gallium arsenide; includin ·166 W POUT typical\n·7.5 dB Power Gain\n·42% Typical PAE\n·50 Ohm Internally Matched\n·<0.3 dB Power Droop;