封装/外壳：440193 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET HEMT 28V 440193 分立半导体产品 晶体管 - FET，MOSFET - 射频

45-W RF Power GaN HEMT

45-W RF Power GaN HEMT

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

包装：散装 描述：BOARD DEMO AMP CIRCUIT CGH40045 开发板，套件，编程器 射频评估和开发套件，开发板

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

Stripline Packaged Schottky Mixer Diodes

400 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

POWERTAP II??SWITCHMODE??Power Rectifier

POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output • Guardring for Stress Protection • Lo

SCHOTTKY BARRIER RECTIFIER

SWITCHMODE Schottky Barrier Rectifier POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high f