120 W, 2.3-2.7 GHz, GaN HEMT for WiMAX and LTE

Description Wolfspeed's CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor

120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

文件：1.69951 Mbytes Page：12 Pages

封装/外壳：440162 包装：托盘 描述：120W GAN HEMT 28V 2.5-2.7GHZ FET 分立半导体产品 晶体管 - FET，MOSFET - 射频

120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE

120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

文件：1.69951 Mbytes Page：12 Pages

120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

文件：1.69951 Mbytes Page：12 Pages

ISD2560

GENERAL DESCRIPTION Winbond’s ISD2500 ChipCorder® Series provide high-quality, single-chip, Record/Playback solutions for 60- to 120-second messaging applications. The CMOS devices include an on-chip oscillator, microphone preamplifier, automatic gain control, antialiasing filter, smoothing filte

Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations

[ISD] Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations

Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations

[ISD] Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations

Silicon Power Rectifier

文件：120.01 Kbytes Page：2 Pages

Silicon Power Rectifier

文件：120.01 Kbytes Page：2 Pages