120 W, 1.8 - 2.3 GHz, GaN HEMT for WCDMA, LTE, WiMAX

Description Wolfspeed's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier applications. The transistor is s

120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

文件：1.80226 Mbytes Page：13 Pages

封装/外壳：440162 包装：卷带（TR） 描述：120W, GAN HEMT, 28V, 1.8-2.1GHZ, 分立半导体产品 晶体管 - FET，MOSFET - 射频

120-W, 1800 – 2300-MHz, GaN HEMTfor WCDMA, LTE, WiMAX

120-W; 1800 – 2300-MHz; GaN HEMT for WCDMA; LTE; WiMAX

包装：盒 描述：CGH21120F DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板

120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

文件：1.80226 Mbytes Page：13 Pages

120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

文件：1.80226 Mbytes Page：13 Pages

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET

文件：401.47 Kbytes Page：8 Pages