型号 功能描述 生产厂家 企业 LOGO 操作

800 to 900 MHz 34 dBm Power GaAs FET

Description The CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Mimix’s powe

MIMIX

800 to 900 MHz 34 dBm Power GaAs FET

Description The CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Mimix’s powe

MIMIX

2.3 to 2.5 GHz 34 dBm Power GaAs FET

Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek’s

MIMIX

2.3 to 2.5 GHz 34 dBm Power GaAs FET

[Celeritek] Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in

ETCList of Unclassifed Manufacturers

未分类制造商

2.3 to 2.5 GHz 34 dBm Power GaAs FET

Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek’s

MIMIX

2.3 to 2.5 GHz 34 dBm Power GaAs FET

[Celeritek] Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in

ETCList of Unclassifed Manufacturers

未分类制造商

0.8-1.0 GHz 34 dBm Power GaAs FET

文件:314.71 Kbytes Page:5 Pages

MIMIX

800-900 MHz 34 dBm Power GaAs FET

文件:470.11 Kbytes Page:4 Pages

MIMIX

800-900 MHz 34 dBm Power GaAs FET

文件:470.11 Kbytes Page:4 Pages

MIMIX

0.8-1.0 GHz 34 dBm Power GaAs FET

文件:314.71 Kbytes Page:5 Pages

MIMIX

800-900 MHz 34 dBm Power GaAs FET

MIMIX

800-900 MHz 34 dBm Power GaAs FET

文件:470.11 Kbytes Page:4 Pages

MIMIX

0.8-1.0 GHz 34 dBm Power GaAs FET

文件:314.71 Kbytes Page:5 Pages

MIMIX

1.8 to 2.0 GHz 34 dBm Power GaAs FET

文件:264.84 Kbytes Page:5 Pages

MIMIX

1.8 to 2.0 GHz 34 dBm Power GaAs FET

文件:69.75 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1.8 to 2.0 GHz 34 dBm Power GaAs FET

MIMIX

1.8 to 2.0 GHz, +34 dBm, power GaAs FET

ETC

知名厂家

1.8 to 2.0 GHz 34 dBm Power GaAs FET

文件:69.75 Kbytes Page:4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1.8 to 2.0 GHz 34 dBm Power GaAs FET

文件:264.84 Kbytes Page:5 Pages

MIMIX

J-FET INPUT OPERATIONAL AMPLIFIER??????

■ GENERAL DESCRIPTION The NJM2162/64 combines feature of the NJM062/064 as well as and providing the capability of wider bandwidth and higher slew rate. It is suitable for telecom application ( active filters etc. ). ■ FEATURES ● Operating Voltage ( ±2V~±18V ) ● High Input Resistance

NJRC

日本无线

J-FET INPUT OPERATIONAL AMPLIFIER??????

■ GENERAL DESCRIPTION The NJM2162/64 combines feature of the NJM062/064 as well as and providing the capability of wider bandwidth and higher slew rate. It is suitable for telecom application ( active filters etc. ). ■ FEATURES ● Operating Voltage ( ±2V~±18V ) ● High Input Resistance

NJRC

日本无线

J-FET INPUT OPERATIONAL AMPLIFIER??????

■ GENERAL DESCRIPTION The NJM2162/64 combines feature of the NJM062/064 as well as and providing the capability of wider bandwidth and higher slew rate. It is suitable for telecom application ( active filters etc. ). ■ FEATURES ● Operating Voltage ( ±2V~±18V ) ● High Input Resistance

NJRC

日本无线

J-FET INPUT OPERATIONAL AMPLIFIER??????

■ GENERAL DESCRIPTION The NJM2162/64 combines feature of the NJM062/064 as well as and providing the capability of wider bandwidth and higher slew rate. It is suitable for telecom application ( active filters etc. ). ■ FEATURES ● Operating Voltage ( ±2V~±18V ) ● High Input Resistance

NJRC

日本无线

2H - VIDEO SCANNING PROCESSOR

DESCRIPTION The STV2162 is an I2C bus controlled Video and Deflexion Processor for 2H-Deflection Television Sets. The IC incorporates also an secondary SMPS (Switch Mode Power Supply) controller with Softstart and Protection facilities. VIDEO PART ■ USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS

STMICROELECTRONICS

意法半导体

CFK2162产品属性

  • 类型

    描述

  • 型号

    CFK2162

  • 制造商

    MIMIX

  • 制造商全称

    MIMIX

  • 功能描述

    0.8-1.0 GHz +34 dBm Power GaAs FET

更新时间:2026-3-14 11:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MURATA/村田
23+
6800
专注配单,只做原装进口现货
N/A
2308+
NA
4862
只做进口原装!假一赔百!自己库存价优!
N/A
23+
NA
50000
全新原装正品现货,支持订货
N/A
QQ咨询
NA
113
全新原装 研究所指定供货商
N/A
24+
NA
200
进口原装正品优势供应
N/A
2026+
NA
51
原装正品,假一罚十!
MURATA
DIP-4
35560
一级代理 原装正品假一罚十价格优势长期供货
MURATA/村田
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
N/A
24+
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
CHIPOWER
24+
SOT-89
9480
公司现货库存,支持实单

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