800 to 900 MHz 34 dBm Power GaAs FET

Description The CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Mimix’s powe

800 to 900 MHz 34 dBm Power GaAs FET

Description The CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Mimix’s powe

2.3 to 2.5 GHz 34 dBm Power GaAs FET

[Celeritek] Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in

2.3 to 2.5 GHz 34 dBm Power GaAs FET

Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek’s

2.3 to 2.5 GHz 34 dBm Power GaAs FET

Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek’s

2.3 to 2.5 GHz 34 dBm Power GaAs FET

[Celeritek] Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in

0.8-1.0 GHz 34 dBm Power GaAs FET

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800-900 MHz 34 dBm Power GaAs FET

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800-900 MHz 34 dBm Power GaAs FET

文件：470.11 Kbytes Page：4 Pages

0.8-1.0 GHz 34 dBm Power GaAs FET

文件：314.71 Kbytes Page：5 Pages

0.8-1.0 GHz 34 dBm Power GaAs FET

文件：314.71 Kbytes Page：5 Pages

800-900 MHz 34 dBm Power GaAs FET

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1.8 to 2.0 GHz 34 dBm Power GaAs FET

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1.8 to 2.0 GHz 34 dBm Power GaAs FET

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1.8 to 2.0 GHz 34 dBm Power GaAs FET

1.8 to 2.0 GHz, +34 dBm, power GaAs FET

1.8 to 2.0 GHz 34 dBm Power GaAs FET

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1.8 to 2.0 GHz 34 dBm Power GaAs FET

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2.3 to 2.5 GHz 34 dBm Power GaAs FET

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.005 2) Braid Data a) Nominal ID 1/16 (.062) b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage 78 e) Total Number of Ends 48 f) Approx. Equiv. AWG 19

Universal Qi Wireless Charging Transmitter

o Input: 5V o Input Current: 2A o Maximum output power of 5W o Operating Frequency: 100-200kHz o Charging Distance: 2-8mm o Charging Plate Dimensions: 53mm x 53mm x 4mm / 2.1 x 2.1 x 0.2 o PCB Dimensions w/ Components: 55mm x 37mm x 6mm / 2.2 x 1.5mm x 0.2 o Weight: 47g

DSP Microcomputers with ROM

GENERAL DESCRIPTION The ADSP-216x Family processors are single-chip microcomputers␣ optimized␣ for␣ digital␣ signal␣ processing␣ (DSP) and other high speed numeric processing applications. The ADSP-216x processors are all built upon a common core with ADSP-2100. Each processor combines the core D

Universal Bushings

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