NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR Low Freq. Power Amp. Built in Damper Diode Complementry CSB1342

NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR Low Freq. Power Amp. Built in Damper Diode Complementry CSB1342

30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE.

NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR Low Freq. Power Amp. Built in Damper Diode Complementry CSB1342

60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE.

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 16 (26/30) AWG BC 0.060 b) Insulation 0.032 Wall, Nom. EPDM Rubber 0.127 (1) Separator Paper Tape, 10 Overlap, Min. (2) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 2) Cable Assembly 2 Components Cabled a) Tw

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175

8-Channel DAC with PLL and Differential Outputs, 192 kHz, 24 Bits

FEATURES PLL generated or direct master clock Low EMI design DAC with 110 dB dynamic range and SNR −96 dB THD + N 3.3 V single supply Tolerance for 5 V logic inputs Supports 24 bits and 8 kHz to 192 kHz sample rates Differential DAC output Log volume control with autoramp function SPI® c

1933 F/R/W Coaxial DFB Laser Diode

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N-Channel MOSFET

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