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位置：首页 > IC中文资料 > CEZ

型号 功能描述 生产厂家&企业 LOGO 操作
CEZ03R10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,125A,RDS(ON)=3.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ04R10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,88A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ04R10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,88A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=6.6mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ05P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-93A,RDS(ON)=5.2mW@VGS=-10V. RDS(ON)=8mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ05P04

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-82A,RDS(ON)=6.5mW@VGS=-10V. RDS(ON)=10mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ06R10S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,67A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ06R10SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,70A,RDS(ON)=7.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ07R10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,81A,RDS(ON)=7.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ07R12

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 120V,90A,RDS(ON)=7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ08R10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,70A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ09C4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,240A,RDS(ON)=0.9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=1.7mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ100R19

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,10A,RDS(ON)=100mW@VGS=10V. -100V,-6A,RDS(ON)=250mW@VGS=-10V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ10C3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,255A,RDS(ON)=1mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=1.4mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ10R10A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,64A,RDS(ON)=9.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=15.5mW@VGS=6V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ10R10AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,65A,RDS(ON)=9.4mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=14mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ10R15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,70A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ10R15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,70A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ10V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ1100P

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-7A,RDS(ON)=260mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ11V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ12R10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,55A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ12V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ1320P

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V,-12.5A,RDS(ON)=0.36W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ13V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ15V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ16R10LA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,31A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=24mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ16V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ17R15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,57A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ18V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ19R15

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,62A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ20V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ22V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ24V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ27V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ3053A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-93A,RDS(ON)=5mW@VGS=-10V. RDS(ON)=9mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ30V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ3133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-36A,RDS(ON)=16mW@VGS=-10V. RDS(ON)=27mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ33V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ36V

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ3P08

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-61A,RDS(ON)=9mW@VGS=-10V. RDS(ON)=13mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ3P08A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-62A,RDS(ON)=8.4mW@VGS=-10V. RDS(ON)=13.5mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ3P09

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-53A,RDS(ON)=9mW@VGS=-10V. RDS(ON)=12mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ3R19

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. 30V,40A,RDS(ON)=11mW@VGS=10V. -30V,-33A,RDS(ON)=17mW@VGS=-10V. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ3R29

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). 30V,56A,RDS(ON)=6.2mW@VGS=10V. -30V,-51A,RDS(ON)=8.6mW@VGS=-10V. Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V,-48A,RDS(ON)=23mW@VGS=-10V. RDS(ON)=28mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ5V6

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
CEZ6185

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-53A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=23mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6405

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-21A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=62mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R26LA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,102A,RDS(ON)=3.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=4.6mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R36L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,110A,RDS(ON)=4.0mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R40SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V,93A,RDS(ON)=4.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=7.4mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R46

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,87A,RDS(ON)=5.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R56L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,90A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=7.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R68

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,42A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=13mW@VGS=4.5V. Applications Motordriver,DCfan.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R68AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,41A,RDS(ON)=9.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=13mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R76

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V,49A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Loadswitch. SynchronousRectifier. DCDCConversi

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R78

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V,39A,RDS(ON)=10.4mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R86AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,53A,RDS(ON)=7.4mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6R88A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,28.8A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RDS(ON)=26mW@VGS=4.5V. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEZ6V2

Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

CEZ供应商更多...

更新时间：2025-8-3 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
艾睿（深圳）半导体有限公司
CEZ07R10L
CET(华瑞)
2447
PR-PACK(5*6)
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
深圳市创新迹电子有限公司
CEZ07R10L
CET/華瑞
2023+
8700
原装现货
询价
天津市博通航睿技术有限公司
CEZ07R10L
CET-MOS
10
询价
北京京北通宇电子元件有限公司
CEZ07R10L
CET-MOS
24+
con
10
现货常备产品原装可到京北通宇商城查价格
询价
深圳市南科功率半导体有限公司
CEZ04R10
NK/南科功率
2025+
DFN5060-8
986966
国产
询价
深圳市盈慧通电子有限公司
CEZ04R10
CET/華瑞
2511
P-PAK5X6
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
贸泽芯城（深圳）电子科技有限公司
CEZ0614-3S
CEZ
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
现代芯城（深圳）科技有限公司
CEZ07R10L
24+
N/A
75000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市德力诚信科技有限公司
CEZ07R10L
CET-MOS
24+
con
10
优势库存,原装正品
询价
易创佳业科技（深圳）有限公司
CEZ07R10L
CET/華瑞
23+
PR-PACK(5*6)
22820
原装正品，支持实单
询价

CEZ芯片相关品牌

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