P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -1.3A, RDS(ON) = 110mW @VGS = -4.5V. RDS(ON) = 160mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -1.5A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-323 package. RoHS compliant.

P Channel MOSFET

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

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10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages