P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-77A,RDS(ON)=8.6mΩ@VGS=-10V. RDS(ON)=12mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

SERIALACCESSSPIBUS4K512x8EEPROM

DESCRIPTION TheST95P04isa4KbitElectricallyErasableProgrammableMemory(EEPROM)fabricatedwithSGS-THOMSON’sHighEnduranceSinglePolysiliconCMOStechnology.The4Kbitmemoryisorganisedas32pagesof16bytes.ThememoryisaccessedbyasimpleSPIbuscompatibleserialinterface.T

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-93A,RDS(ON)=8.4mΩ@VGS=-10V. RDS(ON)=12mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-77A,RDS(ON)=8.6mΩ@VGS=-10V. RDS(ON)=12mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-93A,RDS(ON)=8.4mΩ@VGS=-10V. RDS(ON)=12mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.